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Vishay N-Channel MOSFET 100A 25V Enhancement SO-8 SIDR140DP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 0.61mm |
| Length | 6.15mm |
| Model | SIDR140DP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Series | SiDR140DP |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 0.67mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 113nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- N-channel MOSFET with high continuous drain current of 100A.
- Maximum drain-source voltage rating of 25V for reliable high-power switching.
- Enhancement mode operation ideal for power management applications.
- Low drain-source resistance of 0.67mΩ for efficient performance.
- SO-8 surface mount package with 8 pins for convenient PCB integration.
- TrenchFET Gen IV technology ensures advanced switching efficiency.
- Optimized Qg, Qgd, and Qgd/Qgs ratio reduces power loss during switching.
- Wide operating temperature from -55°C to +150°C for robust performance.
Product Description
Vishay SIDR140DP-T1-RE3 is an advanced N-Channel MOSFET designed for high-performance power switching applications, featuring a continuous drain current of 100A and a maximum drain-source voltage of 25V. Built on TrenchFET Gen IV technology, this enhancement mode MOSFET offers exceptional switching efficiency and reliability.
The device operates with a low drain-source resistance of 0.67 milliohms, resulting in minimal conduction losses and improved power management. Its optimized gate charge characteristics, including reduced Qg, Qgd and Qgd/Qgs ratio, are engineered to minimize switching-related power loss, making it suitable for demanding industrial, automotive, and commercial systems requiring efficient energy transfer.
Packaged in a compact SO-8 surface mount format, the SIDR140DP-T1-RE3 integrates smoothly into modern PCB layouts. The device features a total of 8 pins, supporting high-density electronic designs. Its top-side cooling structure allows enhanced thermal transfer, supporting a maximum power dissipation of 125W. The operational temperature range spans from -55°C to 150°C, catering to environments with challenging thermal requirements.
Key technical parameters include a maximum gate-source voltage rating of 20V, forward voltage specification of -1.2V, and typical gate charge of 113nC at Vgs values. With a channel mode set for enhancement and automotive standard compliance not claimed, it is typically used in industrial power systems, advanced switching regulators, DC-DC converters, and high-efficiency load drivers.
N-channel MOSFET with high continuous drain current. 25V maximum drain-source voltage for robust power switching. Low on-resistance and enhancement mode for reduced losses. Advanced TrenchFET Gen IV technology for superior switching performance.
Optimized gate charge for minimal switching power loss. Wide operational temperature range for flexibility in applications. SO-8 SMT package suitable for high-density PCBs.
Common use cases include industrial automation, motor control, power supply regulation, and commercial systems requiring durable, efficient switching transistors. The Vishay SIDR140DP-T1-RE3 is an excellent choice for engineers seeking reliability and performance in demanding environments. Browse more N-channel MOSFETs and Vishay products in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100A.
It has a maximum drain-source voltage rating of 25V.
This model comes in a SO-8 surface mount package.
The operational temperature range spans from -55°C to 150°C.
It features a low drain-source resistance of 0.67mΩ.
This model has a total of 8 pins.
The maximum power dissipation is rated at 125W.
It uses an enhancement mode N-channel type.
The typical gate charge is 113nC at specified Vgs values.
The maximum gate-source voltage rating is 20V.
It is suitable for industrial power systems, advanced switching regulators, DC-DC converters, and high-efficiency load drivers.
This model utilizes TrenchFET Gen IV technology for advanced switching efficiency.
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