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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 8.1mm |
| Length | 8.1mm |
| Model | SIHH186N60EF-T1GE3 |
| Width | 1.05mm |
| Mount Type | Surface |
| Series | EF |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 8 x 8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 16A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 193mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 114W |
| Typical Gate Charge Qg @ Vgs | 32nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
The Vishay SIHH186N60EF-T1GE3 is a high-performance EF series N-channel MOSFET specifically designed for power management, switching, and conversion applications. Offering a maximum continuous drain current of 16A and a maximum drain-source voltage of 650V, it is well suited for industrial and demanding electronic systems that require high voltage and current handling.
This device features a PowerPAK 8x8 surface mount package, optimizing both thermal efficiency and PCB real estate. The EF series implements fourth-generation E series technology, ensuring low figure-of-merit and reduced effective capacitance - critical for minimizing switching and conduction losses in fast-reacting control systems.
Operating in enhancement mode, the SIHH186N60EF-T1GE3 delivers reliable performance with low drain-source resistance (193mΩ). Its maximum power dissipation capacity reaches 114W, allowing stable operation even during peak loads. Designers benefit from wide operating temperature boundaries, ranging from -55°C up to 150°C, which makes it suitable for harsh industrial environments, power supplies, motor drives, renewable energy inverter circuits, and similar demanding use cases.
Further technical highlights include a typical gate charge of 32nC at Vgs, maximum gate-source voltage of 30V, and forward voltage Vf of 1.2V. The MOSFET maintains its integrity under avalanche energy events (UIS rated), enhancing reliability for applications encountering over-voltage or pulse loading. With a standard 4-pin configuration and compliance to surface-mount installation practices, engineers can integrate it seamlessly into automated production lines.
The device's robust performance and advanced construction allow its use in industrial automation, motor controls, high-voltage DC switching, commercial power systems, and advanced energy management solutions. For more Vishay EF series MOSFET options, explore the MOSFETs category on EnvMart.
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