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Vishay EF Series N-Channel MOSFET 16A 650V PowerPAK 8x8 SIHH186N60EF-T1GE3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 8.1mm
Length 8.1mm
Model SIHH186N60EF-T1GE3
Width 1.05mm
Mount Type Surface
Series EF
Maximum Operating Temperature 150°C
Package Type PowerPAK 8 x 8
Minimum Operating Temperature -55°C
Pin Count 4
Channel Type Type N
Maximum Continuous Drain Current Id 16A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 193mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 114W
Typical Gate Charge Qg @ Vgs 32nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1.2V

Key Features

  • Operates as an N-channel MOSFET with maximum continuous drain current of 16A.
  • Rated for up to 650V drain-source voltage for high-voltage applications.
  • Surface mount PowerPAK 8x8 package enables efficient thermal dissipation.
  • Enhancement mode operation provides fast switching and reliable control.
  • Utilizes fourth generation E series technology for reduced switching losses.
  • Low drain-source resistance of 193mΩ ensures high efficiency.
  • Maximum power dissipation of 114W supports heavy-duty operation.
  • Wide operating temperature range from -55°C to 150°C.

Product Description

The Vishay SIHH186N60EF-T1GE3 is a high-performance EF series N-channel MOSFET specifically designed for power management, switching, and conversion applications. Offering a maximum continuous drain current of 16A and a maximum drain-source voltage of 650V, it is well suited for industrial and demanding electronic systems that require high voltage and current handling.

This device features a PowerPAK 8x8 surface mount package, optimizing both thermal efficiency and PCB real estate. The EF series implements fourth-generation E series technology, ensuring low figure-of-merit and reduced effective capacitance - critical for minimizing switching and conduction losses in fast-reacting control systems.

Operating in enhancement mode, the SIHH186N60EF-T1GE3 delivers reliable performance with low drain-source resistance (193mΩ). Its maximum power dissipation capacity reaches 114W, allowing stable operation even during peak loads. Designers benefit from wide operating temperature boundaries, ranging from -55°C up to 150°C, which makes it suitable for harsh industrial environments, power supplies, motor drives, renewable energy inverter circuits, and similar demanding use cases.

Further technical highlights include a typical gate charge of 32nC at Vgs, maximum gate-source voltage of 30V, and forward voltage Vf of 1.2V. The MOSFET maintains its integrity under avalanche energy events (UIS rated), enhancing reliability for applications encountering over-voltage or pulse loading. With a standard 4-pin configuration and compliance to surface-mount installation practices, engineers can integrate it seamlessly into automated production lines.

The device's robust performance and advanced construction allow its use in industrial automation, motor controls, high-voltage DC switching, commercial power systems, and advanced energy management solutions. For more Vishay EF series MOSFET options, explore the MOSFETs category on EnvMart.

Vishay EF Series N-Channel MOSFET 16A 650V PowerPAK 8x8 SIHH186N60EF-T1GE3
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Frequently Asked Questions

The maximum continuous drain current of this model is 16A.

It is rated for a maximum drain-source voltage of 650V.

This MOSFET comes in a PowerPAK 8 x 8 surface mount package.

The typical gate charge at Vgs is 32nC.

It operates within a temperature range of -55°C to 150°C.

The maximum power dissipation capacity of this unit is 114W.

The maximum drain-source resistance is 193mΩ.

It has a standard 4-pin configuration.

The maximum gate-source voltage for this model is 30V.

This device is an N-channel MOSFET.

It is suitable for applications in industrial automation, motor controls, high-voltage DC switching, and commercial power systems.

The EF series utilizes fourth-generation E series technology to reduce switching losses.

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