Taiwan Semiconductor N-Channel MOSFET TSM060N03CP ROG 30V 80A TO-252 Package Enhancement IEC 61249

Taiwan Semiconductor TSM060N03CP ROG is an advanced N-Channel MOSFET engineered for demanding power management scenarios in electronic and industrial systems. This device excels in delivering robust performance thanks to its ability to support a maximum continuous drain current of 80A and a drain-source voltage of up to 30V, making it ideal for high-current, low-voltage circuit configurations.

The MOSFET features an enhancement mode channel that provides efficient switching and control, contributing to low on-state resistance (9mΩ Rds), which is crucial for minimizing operational losses and maximizing energy efficiency. Surface-mount TO-252 packaging ensures optimal thermal dissipation and simplified PCB placement, while its four-pin configuration adds flexibility to integration designs.

With a maximum power dissipation rating of 54W, the TSM060N03CP ROG operates reliably across a substantial temperature range from -55°C to 150°C. Its gate-source voltage capability of up to 20V and typical gate charge of 11.1nC at Vgs offer suitability for high-frequency switching and logic-level control, streamlining use in digital and analog power electronics.

Compliance with automotive standard IEC 61249 and RoHS requirements broadens its applications across automotive, industrial automation, motor drivers, and advanced power converter designs. The forward voltage rating of 1V, coupled with minimal channel resistance and enhancement mode, enhances overall circuit reliability.

The MOSFET's compact form factor (6.5mm length, 5.8mm width, 2.3mm height) and surface-mount design support dense PCB layouts and contribute to efficient heat management. Delivers up to 80A maximum continuous drain current for robust power handling.

Operates at a maximum drain-source voltage of 30V suitable for low-voltage, high-current circuits. Utilizes TO-252 surface-mount package for efficient PCB integration and thermal management. Features enhancement mode and low drain-source resistance of 9mΩ, ensuring minimal losses.

Supports maximum power dissipation up to 54W and broad temperature range from -55°C to 150°C. Includes four pins for flexible design and secure connections in electronic assemblies. Automotive standard IEC 61249 compliance for versatility in automotive and industrial applications.

Gate threshold voltage range is well-suited for direct control in logic-level drive designs.

This N-Channel MOSFET is suitable for use in industrial equipment, automotive subsystems, power supplies, inverters, and advanced electronic assemblies. Explore more semiconductor solutions and MOSFETs from Taiwan Semiconductor in the Electronics & Electricals category at EnvMart.