$0.66
$0.64
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Toshiba Single 1 N-Channel MOSFET, 3.5 A, 100 V Enhancement Mode, 3-Pin SOT-23 SSM3K361R
Specifications
| Country of Origin | Thailand |
|---|---|
| Brand | Toshiba |
| Height | 0.7mm |
| Length | 2.9mm |
| Model | SSM3K361R |
| Width | 1.8mm |
| Mount Type | Surface Mount |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.5A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 92mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.4W |
| Forward Voltage Vf | 1.5V |
| Transistor Configuration | Single |
Key Features
- Supports maximum continuous drain current of 3.5 A.
- Maximum drain-source voltage of 100 V for robust operation.
- Utilizes enhancement mode channel for efficient switching.
- Package type is compact SOT-23 with 3 pins, suitable for surface mounting.
- Offers low drain-source resistance of 92 milliohm for lower losses.
- Maximum power dissipation rated at 2.4 W for reliable performance.
- Maximum operating temperature up to 175°C allows for harsh environments.
- Size measures 2.9 mm x 1.8 mm x 0.7 mm ensuring small footprint.
Product Description
Toshiba SSM3K361R is a single N-Channel MOSFET operating in enhancement mode, rated at a maximum continuous drain current of 3.5 A and a maximum drain-source voltage of 100 V. It comes in a compact 3-pin SOT-23 package designed for surface mounting on PCBs.
This MOSFET features low drain-source resistance (Rds(on)) of 92 milliohm, which aids in reducing power losses and improving efficiency in power management and switching applications. The device supports a maximum power dissipation of 2.4 W and can operate reliably at temperatures up to 175°C, making it suitable for industrial and automotive environments.
The transistor is configured as a single element per chip with typical forward voltage of 1.5 V. Its dimensions of length 2.9 mm, width 1.8 mm, and height 0.7 mm enable compact integration in space-constrained electronics. The device complies with the automotive standard AEC-Q101, providing quality assurance for high-reliability use cases.
This MOSFET is widely applicable in power management switches, DC-DC converters, and other semiconductor discrete component uses in industrial, automotive, and commercial electronics. The surface-mount SOT-23 package enhances assembly efficiency for automatic production lines.
Supports 3.5 A maximum continuous drain current. 100 V maximum drain-source voltage rating. Enhancement mode N-Channel configuration. SOT-23 package with 3 pins for surface mount applications. Drain-source resistance of 92 mΩ to reduce conduction losses.
Power dissipation up to 2.4 W for sustained operation. High operating temperature tolerance of 175°C. Compact size with 2.9 mm length, 1.8 mm width, and 0.7 mm height. Typical forward voltage of 1.5 V. Meets AEC-Q101 automotive standard for quality.
Explore a wide range of Toshiba semiconductors and power management components on EnvMart for your industrial, automotive, and commercial electronic design needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 3.5 A.
This model has a maximum drain-source voltage rating of 100 V.
It comes in a compact SOT-23 package designed for surface mounting.
The drain-source resistance (Rds(on)) is 92 milliohm, which helps reduce conduction losses.
The maximum power dissipation rated for this unit is 2.4 W.
It can operate reliably at temperatures up to 175°C.
The dimensions are 2.9 mm in length, 1.8 mm in width, and 0.7 mm in height.
This unit complies with the automotive standard AEC-Q101.
The typical forward voltage is 1.5 V.
This model is configured as a single element per chip.
It utilizes an enhancement mode N-Channel configuration.
This MOSFET is widely applicable in power management switches, DC-DC converters, and other semiconductor discrete component uses in industrial, automotive, and commercial electronics.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$2.77
$2.69
-3%
New
$0.22
$0.21
-3%
New
Recently Viewed Products
$0.66
$0.64
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent