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Toshiba Type P-Channel MOSFET, 60 A, 40 V Enhancement Mode, 3-Pin TO-252 Package TJ60S04M3L
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 2.3mm |
| Length | 6.5mm |
| Model | TJ60S04M3L |
| Width | 7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 60A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 9.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 90W |
| Typical Gate Charge Qg @ Vgs | 125nC |
| Maximum Gate Source Voltage Vgs | -20, +10V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features low drain-source on-resistance of 7.0 mΩ typical at VGS = -10 V.
- Supports surface mount installation with TO-252 package and 3-pin configuration.
- Enhancement mode MOSFET with threshold voltage between -2.0 to -3.0 V.
- Maximum power dissipation rating of 90 W suitable for robust applications.
- Operating temperature range from -55°C to 175°C ensuring performance in harsh conditions.
- Complies with automotive standard AEC-Q101 for reliability in automotive environments.
- Gate charge is typically 125 nC at VGS, allowing efficient switching.
- Low leakage current with IDSS maximum of -10 μA at VDS = -40 V.
Product Description
Toshiba TJ60S04M3L is a Type P-Channel Enhancement Mode MOSFET capable of handling a maximum continuous drain current of 60 A and a maximum drain-source voltage of 40 V. It is packaged in a robust TO-252 3-pin surface mount format, making it ideal for compact electronic assemblies and power management circuits.
This MOSFET features a low drain-source on-resistance of 7.0 mΩ typical at a gate-source voltage of -10 V, which ensures reduced conduction losses and enhanced efficiency in switching applications. The gate charge of 125 nC supports fast switching performance suitable for DC-DC converters, motor drivers, and automotive electronics.
The device operates reliably over a wide temperature range of -55°C to 175°C and meets the stringent AEC-Q101 automotive qualification standard, guaranteeing durable operation in automotive and industrial environments.
Its compact dimensions - 6.5 mm length, 7 mm width, and 2.3 mm height - facilitate integration into dense circuit boards. The leak current is minimal, with IDSS at -10 μA max, ensuring low standby power loss.
Typical applications include automotive systems, motor drivers, switching voltage regulators, and DC-DC converters requiring efficient P-Channel MOSFETs with reliable operation and high power dissipation capability up to 90 W.
Low drain-source on-resistance reduces power losses during conduction. High maximum current rating for demanding power circuits. Wide operating temperature range supports industrial and automotive environments. Compact TO-252 surface mount package enables space-saving PCB design.
Compliant with automotive standards for enhanced reliability.
This transistor represents a reliable solution for power switching and regulation in demanding industrial and automotive applications. Browse other semiconductor devices and MOSFETs on EnvMart for complementary parts and design support.
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Frequently Asked Questions
The maximum continuous drain current for this model is 60 A.
It has a maximum drain-source voltage rating of 40 V.
The typical drain-source on-resistance is 7.0 mΩ at a gate-source voltage of -10 V.
This model is packaged in a TO-252 3-pin surface mount format.
It operates reliably over a wide temperature range of -55°C to 175°C.
It complies with the AEC-Q101 automotive standard for reliability in automotive environments.
The maximum power dissipation rating is 90 W, suitable for robust applications.
The typical gate charge at VGS is 125 nC.
The dimensions are 6.5 mm in length, 7 mm in width, and 2.3 mm in height.
The maximum gate-source voltage is -20 V for the gate and +10 V for the source.
The maximum leakage current (IDSS) is -10 μA at VDS = -40 V.
This MOSFET is suitable for applications such as automotive systems, motor drivers, and DC-DC converters.
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