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Toshiba N-Channel MOSFET, 168 A, 75 V, 8-Pin SOP TPH2R608NH,L1Q(M
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Height | 950μm |
| Length | 6mm |
| Model | TPH2R608NH,L1Q(M |
| Width | 5mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 168A |
| Maximum Drain Source Voltage Vds | 75V |
| Maximum Drain Source Resistance Rds | 2.6mΩ |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 72nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Supports a maximum continuous drain current of 168 amperes.
- Maximum drain-source voltage rating of 75 volts.
- Packaged in an 8-pin SOP surface mount format.
- Low drain-source resistance of 2.6 milliohms for efficient power handling.
- Operates reliably from -55°C to a maximum of 150°C.
- Gate-source voltage up to 20 volts maximum.
- Typical gate charge of 72 nanoCoulombs at gate-source voltage.
- Forward voltage is -1.2 volts ensuring precise switching performance.
Product Description
Toshiba TPH2R608NH,L1Q(M is an N-Channel MOSFET designed using silicon technology, optimized for high current switching applications up to 168 amperes and up to 75 volts drain-source voltage. It is commonly used in industrial and commercial electronics for high-efficiency DC-DC converters and switching voltage regulators.
This MOSFET features a surface mount 8-pin SOP package, providing low resistance (2.6 milliohms) for reduced conduction losses and enhanced thermal performance. It supports a wide operating temperature range from -55°C to 150°C, making it suitable for demanding environments.
The device also supports a maximum gate-source voltage of 20 volts and has a typical gate charge of 72 nanoCoulombs, ensuring fast switching capabilities. Its forward voltage drop of -1.2 volts facilitates consistent and reliable operation.
The compact package measures 6 mm in length, 5 mm in width, and 950 micrometers in height, allowing easy integration into electronic circuits with surface mounting requirements. Despite lacking automotive standards, this MOSFET is ideal for industrial, laboratory, consumer electronics, and manufacturing environments that require efficient power control.
Supports a maximum continuous drain current of 168 amperes. Maximum drain-source voltage rating of 75 volts. Packaged in an 8-pin SOP surface mount format. Low drain-source resistance of 2.6 milliohms for efficient power handling.
Operates reliably from -55°C to a maximum of 150°C. Gate-source voltage up to 20 volts maximum. Typical gate charge of 72 nanoCoulombs at gate-source voltage. Forward voltage is -1.2 volts ensuring precise switching performance.
Compact physical dimensions: length 6 mm, width 5 mm, and height 950 micrometers. Designed without any automotive standard certifications.
This Toshiba MOSFET is well suited for use in industrial power management, consumer electronics, and other applications requiring high-efficiency switching devices. Explore more MOSFETs and semiconductor solutions on EnvMart for your electronics project needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 168 amperes.
It has a maximum drain-source voltage rating of 75 volts.
This unit measures 6 mm in length, 5 mm in width, and 950 micrometers in height.
The maximum gate-source voltage for this MOSFET is 20 volts.
The typical gate charge at gate-source voltage is 72 nanoCoulombs.
It features a low drain-source resistance of 2.6 milliohms.
It operates reliably from -55°C to a maximum of 150°C.
This model is packaged in an 8-pin SOP surface mount format.
The forward voltage drop is -1.2 volts.
It is commonly used in industrial and commercial electronics for high-efficiency DC-DC converters and switching voltage regulators.
The maximum power dissipation for this MOSFET is 2.5 watts.
This MOSFET is designed without any automotive standard certifications and is better suited for industrial and consumer electronics applications.
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