Toshiba N-Channel MOSFET, 6 A Current, 60 V Voltage, 3-Pin SOT-23 Surface Mount Transistor SSM3K341R,LF(T

The Toshiba SSM3K341R,LF(T is an N-Channel MOSFET transistor specifically engineered for power management applications. It features a maximum continuous drain current of 6 amps and can operate up to 60 volts drain-source voltage. Packaged in a compact 3-pin SOT-23 surface mount, it is perfectly suited for modern electronic devices requiring efficient power switching.

Constructed from silicon material, this transistor delivers reliable performance in demanding environments with operating temperatures from -55°C up to 175°C. Its low maximum drain-source resistance of 43 milliohms allows for minimal conduction losses, improving overall energy efficiency.

With a typical gate charge of 9.3 nanocoulombs at 9 volts gate-source voltage, it supports fast switching speeds, making it ideal for high-frequency circuits. Maximum power dissipation of 2.4 watts ensures effective thermal handling during operation.

The component dimensions are precisely controlled (length 2.4 mm, width 2.9 mm, height 0.8 mm), enabling high-density PCB layouts common in industrial, communication, consumer electronics, and power supply applications.

This MOSFET is intended for use in industrial and commercial electronic assembly lines where compact, efficient surface mount components are critical. It is common in power management switching, signal amplification, and load switching functions.

Set the standard for quality and versatility with Toshiba's SSM3K341R,LF(T transistor, combining robust electrical characteristics and compact form factor for sophisticated electronic designs. Explore more semiconductors and MOSFETs for your design and manufacturing needs at EnvMart.

This device offers a maximum continuous drain current of 6 amperes for robust performance. Maximum drain-source voltage is rated at 60 volts suitable for medium power circuits. The transistor package type is a compact 3-pin SOT-23 surface mount for efficient PCB integration.

Maximum power dissipation is 2.4 watts, allowing reliable thermal management. Operating temperature ranges from -55°C to 175°C for wide environmental suitability. Gate-source voltage can safely reach up to ±20 V maximizing control flexibility.

Low maximum drain-source resistance of 43 milliohms ensures efficiency and reduces loss. Typical gate charge is 9.3 nanocoulombs at gate-source voltage enhancing switching speed. Physical dimensions are small with length 2.4 mm, width 2.9 mm, and height 0.8 mm, ideal for space-constrained layouts.

The device is manufactured using silicon material and is optimized for power management switching. Find a diverse range of Toshiba power semiconductors and discrete components at EnvMart to support your industrial and commercial electronics projects.