Toshiba N-Channel MOSFET 3 A, 900 V Enhancement Mode, 3-Pin SC-67 2SK3564,S5Q(J

Toshiba 2SK3564,S5Q(J N-Channel MOSFET is a discrete semiconductor transistor designed for power applications requiring efficient switching and amplification with a maximum continuous drain current of 3 A and maximum drain-source voltage of 900 V. It features an enhancement channel mode with a 3-pin SC-67 package to facilitate through hole mounting, making it suitable for various electronic circuit designs requiring reliable power handling.

This MOSFET provides a maximum power dissipation of 40 W enabling it to handle substantial power levels safely. It has a maximum drain-source resistance of 4.3 Ω, ensuring low conduction losses. Its gate can tolerate voltages up to ±30 V, with a typical gate charge of 17 nC allowing for rapid switching operations.

The device supports a wide operating temperature range from -55°C minimum to 150°C maximum, offering robustness for industrial, automotive, laboratory, and commercial electronics applications. The transistor is a single element per chip configuration, simplifying usage in discrete design implementations.

Physical dimensions of 10 mm length, 4.5 mm width, and 15 mm height make this component compact and integration-friendly. Manufacturing origin is Malaysia, meeting quality assurance and reliability standards expected of Toshiba power semiconductors.

3 A maximum continuous drain current. 900 V maximum drain-source voltage. Enhancement mode N-channel configuration. 3-pin SC-67 package for through hole mounting. Maximum power dissipation of 40 W. Operating temperature range: -55°C to 150°C.

Maximum gate-source voltage ±30 V and typical gate charge 17 nC. Forward voltage of -1.9 V. Compact dimensions: 10 mm (L) x 4.5 mm (W) x 15 mm (H). Single transistor configuration.

This MOSFET is well-suited for industrial electronics, power management, automotive electronics, laboratory instrumentation, and manufacturing processes requiring reliable discrete semiconductor components. It supports usage in high voltage and high power circuits and is ideal for designers requiring a compact high-performance N-channel MOSFET.

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