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Vishay E Series Power IPAK Package N-Channel Enhancement MOSFET 2.9 A 800 V 3-Pin SIHU2N80AE-GE3

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Vishay E Series Power IPAK Package N-Channel Enhancement MOSFET 2.9 A 800 V 3-Pin SIHU2N80AE-GE3

Name: Vishay E Series Power IPAK Package N-Channel Enhancement MOSFET 2.9 A 800 V 3-Pin SIHU2N80AE-GE3
Brand: Vishay
SKU: 411873
Price: 20.22 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Height	2.18mm
Length	6.73mm
Model	SIHU2N80AE-GE3
Width	6.22mm
Mount Type	Through Hole
Series	E
Maximum Operating Temperature	150°C
Package Type	IPAK
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	2.9A
Maximum Drain Source Voltage Vds	800V
Maximum Drain Source Resistance Rds	2.5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	62.5W
Typical Gate Charge Qg @ Vgs	10.5nC
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.2V

Key Features

Features a 3-pin IPAK (TO-251) through-hole package.
Supports a maximum power dissipation of 62.5 watts for high efficiency.
Includes ultra-low gate charge of 10.5 nC to reduce switching losses.
Rated for operation from -55°C up to 150°C for robust industrial applications.
Designed with integrated Zener diode ESD protection for enhanced durability.
Low figure-of-merit (FOM) and reduced conduction resistances optimize performance.

Product Description

Vishay SIHU2N80AE-GE3 is a high-performance E Series power MOSFET with an N-channel enhancement mode designed for reliable industrial and electronic applications. It features a through-hole IPAK (TO-251) 3-pin package allowing easy mounting on PCBs.

This MOSFET provides a maximum continuous drain current of 2.9 amperes and supports a high maximum drain-source voltage of 800 volts, making it suitable for high-voltage switching circuits. It dissipates up to 62.5 watts of power while maintaining low conduction resistance and minimal switching losses due to its ultra-low gate charge of 10.5 nC.

Operational across a wide temperature range from -55°C to 150°C, this component is ideal for robust applications including power management, industrial controls, and automotive electronics. The integrated Zener diode offers enhanced electrostatic discharge (ESD) protection, improving device longevity and reliability.

3-pin IPAK (TO-251) package for through-hole mounting. N-channel enhancement mode MOSFET with ultra-low gate charge. High voltage rating of 800 V and continuous drain current of 2.9 A. Power dissipation rating of 62.5 W supports demanding power control systems.

Wide operating temperature range from -55°C to 150°C. Integrated Zener diode for reliable ESD protection.

This component fits into electronic circuits for switching, amplification, and power control, commonly used in industrial equipment, consumer electronics, and automotive systems. Its package and ratings also make it suitable for laboratory and commercial applications where durability and precision are important.

Explore further Vishay power MOSFET options and related discrete semiconductor devices on EnvMart for enhanced circuit design and efficient power management.