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onsemi N-Channel Power MOSFET 30 V, 46 A, Enhancement Mode, Surface Mount SO-8FL Package NTMFS4C10NT1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 6.1mm |
| Model | NTMFS4C10NT1G |
| Width | 5.1mm |
| Mount Type | Surface |
| Series | NTMFS4C10N |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8FL |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 46A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 10.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 23.6W |
| Typical Gate Charge Qg @ Vgs | 18.6nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.1V |
Key Features
- This MOSFET operates in enhancement mode for efficient switching.
- It features a compact surface mount SO-8FL package with 8 pins.
- The device has a low drain-source resistance of 10.8 milliohms for reduced power loss.
- Maximum power dissipation is 23.6 watts, suitable for high-efficiency applications.
- Operating temperature range spans from -55°C to 150°C, allowing robust performance.
- Typical gate charge is low at 18.6 nanocoulombs, optimizing switching speeds.
- Gate-source voltage tolerance ranges from -20 V to +20 V, providing reliability.
- Forward voltage drop is 1.1 V, minimizing conduction losses.
Product Description
onsemi NTMFS4C10NT1G is a premium N-Channel Power MOSFET with a maximum drain-source voltage of 30 V and a continuous drain current rating of 46 A. It employs enhancement mode technology and is housed in a compact SO-8FL surface mount package with 8 pins, ideal for modern electronic applications.
This MOSFET offers a low on-resistance of 10.8 milliohms, reducing conduction losses and enhancing power efficiency. It supports a maximum power dissipation of 23.6 watts and can operate reliably within a wide temperature range from -55°C to 150°C, making it suitable for demanding industrial and automotive environments.
The device features a gate charge of 18.6 nanocoulombs at specified gate voltage levels, enabling fast switching and improved device performance. It tolerates gate-source voltages between -20 V and +20 V, ensuring safe operation under diverse conditions. A forward voltage of 1.1 V contributes to its efficiency.
Physically, the MOSFET measures 6.1 mm in length, 5.1 mm in width, and 1.05 mm in height, allowing for space-efficient PCB designs. It is designed for surface mounting (SMT), facilitating automated assembly and improved device reliability.
The onsemi NTMFS4C10NT1G MOSFET is widely applicable in industrial, power management, construction electronics, HVAC systems, and automotive controls, providing high-performance switching solutions. It is well-suited for applications requiring robust, low-loss, high-current switching devices.
This MOSFET operates in enhancement mode for efficient switching. It features a compact surface mount SO-8FL package with 8 pins. The device has a low drain-source resistance of 10.8 milliohms for reduced power loss. Maximum power dissipation is 23.6 watts, suitable for high-efficiency applications.
Operating temperature range spans from -55°C to 150°C, allowing robust performance. Typical gate charge is low at 18.6 nanocoulombs, optimizing switching speeds. Gate-source voltage tolerance ranges from -20 V to +20 V, providing reliability.
Forward voltage drop is 1.1 V, minimizing conduction losses. Dimensions include a length of 6.1 mm, width of 5.1 mm, and height of 1.05 mm. Designed for surface mount applications in power management and electronic circuits.
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Frequently Asked Questions
The maximum drain-source voltage of this model is 30 V.
This MOSFET has a continuous drain current rating of 46 A.
It is housed in a compact SO-8FL surface mount package.
The operating temperature range spans from -55°C to 150°C.
The typical gate charge is 18.6 nanocoulombs.
The forward voltage drop is 1.1 V.
The maximum power dissipation is 23.6 watts.
The dimensions are 6.1 mm in length, 5.1 mm in width, and 1.05 mm in height.
The gate-source voltage tolerance ranges from -20 V to +20 V.
The maximum drain-source resistance is 10.8 milliohms.
This model is suitable for applications in industrial, power management, construction electronics, HVAC systems, and automotive controls.
The channel type is N-channel, and it operates in enhancement mode.
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