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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 46.5mm |
| Length | 20.2mm |
| Model | 2SA1943OTU |
| Width | 5.2mm |
| Mount Type | Through Hole |
| Series | 2SA1943 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-264 |
| Minimum Operating Temperature | -50°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -250V |
| Minimum DC Current Gain hFE | 55 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -250V |
| Maximum Power Dissipation Pd | 150W |
| Maximum DC Collector Current Idc | -17A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 30MHz |
onsemi Model 2SA1943OTU is a high-power PNP Bipolar Junction Transistor (BJT) featuring a maximum DC collector current of 17 A and a collector emitter voltage rating of 250 V. Packaged in a TO-264 form factor with three pins, it supports through-hole mounting and is optimized for power electronics applications requiring efficient switching and amplification.
This transistor is designed for reliability in demanding industrial environments with an operating temperature range from -50°C up to 150°C. The device supports a maximum power dissipation of 150 W, making it suitable for high current and power applications.
The transistor offers a minimum DC current gain (hFE) of 55 and a maximum transition frequency (ft) of 30 MHz, enabling effective high-frequency performance where required. It is commonly deployed in electronic components sectors covering power and connectors, discrete semiconductors, and bipolar transistor applications.
Key physical dimensions of the transistor include a height of 46.5 mm, length of 20.2 mm, and width of 5.2 mm. It features a single transistor configuration and a PNP polarity type suitable for various circuit designs requiring PNP transistors.
Maximum collector current: 17 A for high current capability. Collector emitter voltage rating: 250 V to withstand voltage stresses. TO-264 package supports thermal management and mechanical reliability. High power dissipation rated at 150 W for heavy-duty usage.
Wide operating temperature range from -50°C to 150°C. Minimum DC current gain (hFE) of 55 ensures effective switching. Maximum transition frequency of 30 MHz supports moderate frequency applications. Three-pin design enables easy integration into PCB layouts.
This power PNP transistor is ideal for industrial and electronic manufacturing uses including power amplifiers, switching circuits, and other electronic design applications where robust bipolar transistors are required. It does not comply with any special automotive or industry approvals but is a proven component in standard electronic manufacturing.
Explore more high-quality Bipolar Transistors and power semiconductors on EnvMart for your design and production needs.
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