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Vishay P-Channel MOSFET 4.3 A 20 V Enhancement Mode 4-Pin MICRO FOOT SI8489EDB-T2-E1
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 0.268mm |
| Length | 1mm |
| Model | SI8489EDB-T2-E1 |
| Width | 1mm |
| Mount Type | Surface |
| Series | Si8489EDB |
| Maximum Operating Temperature | 150°C |
| Package Type | MICRO FOOT |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4.3A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 82mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 17.5nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -0.8V |
Key Features
- The device supports enhancement mode operation for efficient switching.
- Maximum power dissipation is rated at 1.8W allowing reliable thermal performance.
- Operating temperature range spans from -55°C to 150°C for robust industrial use.
- Low maximum drain-source resistance of 82 milliohms ensures minimized conduction losses.
- The gate charge is typically 17.5nC, facilitating fast switching capabilities.
- Maximum gate-source voltage ranges from -12V to +12V ensuring gate robustness.
- Small footprint with dimensions 1mm x 1mm x 0.268mm optimizes PCB space.
- Package is surface mount type, ideal for automated assembly processes.
Product Description
Vishay SI8489EDB-T2-E1 is a P-Channel MOSFET designed for discrete semiconductor applications. It provides a continuous drain current of 4.3 A and can withstand a maximum drain-source voltage of 20 V. Packaged in a compact 4-pin MICRO FOOT format, this device supports enhancement mode operation suited for switching applications that require fast, efficient control.
The device dissipates up to 1.8 W of power, ensuring reliable operation within specified thermal limits. Its gate charge of 17.5 nC at Vgs makes it suitable for low gate drive losses and fast switching speeds, improving overall circuit efficiency. The maximum gate-source voltage of ±12 V provides protection against gate stress in demanding environments.
Operating temperature ranges from -55°C to 150°C, allowing usage in harsh industrial, electronics manufacturing, and power management scenarios. The device's very low drain-source resistance of 82 mΩ minimizes conduction losses, contributing to energy-efficient designs.
Physical dimensions are compact with a height of 0.268 mm, length and width each 1 mm, supporting dense PCB layouts and automated surface mount soldering. This product is manufactured in China and does not carry automotive certifications, suitable primarily for industrial electronics projects.
The device supports enhancement mode for controlled switching. Compact MICRO FOOT surface mount package optimizes board space. Wide operating temperature range accommodates industrial environments. Low on-resistance reduces power dissipation and heat generation.
Robust gate voltage limits protect the device in application circuits. Fast switching behavior enabled by low gate charge. Continuous drain current of 4.3 A aligns with moderate power needs. Maximum drain-source voltage rating supports up to 20 V applications.
Manufactured under standard conditions in China ensuring quality compliance.
This Vishay MOSFET series is ideal for industrial, manufacturing, power control, and commercial electronics applications. It can be used in circuit designs requiring efficient P-channel switches with a small form factor and reliable thermal management. EnvMart offers comprehensive selection of semiconductor components including MOSFETs for various industrial uses.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.3 A.
It can withstand a maximum drain-source voltage of 20 V.
This model has dimensions of 1 mm x 1 mm x 0.268 mm.
The maximum power dissipation is rated at 1.8 W.
The typical gate charge is 17.5 nC at Vgs.
The operating temperature range spans from -55°C to 150°C.
It is packaged in a compact 4-pin MICRO FOOT format.
The maximum gate-source voltage ranges from -12 V to +12 V.
The maximum drain-source resistance is 82 milliohms.
This model features a P-channel configuration.
It is suitable for industrial, manufacturing, power control, and commercial electronics applications.
Yes, the surface mount type package is ideal for automated assembly processes.
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