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Vishay N-Channel MOSFET 7.7 A 60 V Enhancement 3-Pin TO-252 IRFR014TRPBF

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 2.38mm
Length 6.73mm
Model IRFR014TRPBF
Width 6.22mm
Mount Type Surface
Series IRFR
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 7.7A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 200mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 25W
Typical Gate Charge Qg @ Vgs 11nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.6V

Key Features

  • Maximum continuous drain current is 7.7 A ensuring reliable operation.
  • Maximum drain-source voltage is 60 V suitable for medium-power applications.
  • Surface mount design with TO-252 package allows easy PCB integration.
  • Enhancement mode with N-channel channel type for switching efficiency.
  • Maximum power dissipation rating of 25 W provides thermal robustness.
  • Operating temperature range from -55°C to 150°C supports diverse environments.
  • Low maximum drain-source resistance of 200 mΩ optimizes conduction losses.
  • Typical gate charge of 11 nC allows fast switching performance.

Product Description

Vishay IRFR014TRPBF is a robust N-Channel MOSFET transistor designed for enhancement mode operation with a maximum drain current of 7.7 A and drain-source voltage of 60 V. Packaged in a compact TO-252 surface mount package with 3 pins, it is engineered to provide efficient switching in electronic circuits.

This MOSFET supports a maximum power dissipation of 25 W, allowing it to function reliably in applications requiring medium power handling, such as power management, motor controls, and switching regulators. The transistor operates over a wide temperature range from -55°C up to 150°C which makes it suitable for industrial, automotive, and general electronic applications.

The device features a low maximum drain-source resistance of 200 milliohms which reduces conduction losses and enhances energy efficiency during operation. Its typical gate charge of 11 nanocoulombs at specified gate-source voltage allows fast switching with minimal delay.

The body size dimensions (L x W x H) of 6.73 mm by 6.22 mm by 2.38 mm ensures it fits standard PCB layouts requiring surface mount components. The forward voltage drop of 1.6 V supports stable performance in circuits requiring reliable voltage control.

Maximum continuous drain current of 7.7 A suitable for a variety of power electronic applications. Drain-source voltage rating of 60 V provides adequate overhead for medium voltage circuits. Surface mount TO-252 package promotes compact and efficient circuit design.

Operation from -55°C to 150°C to withstand harsh environmental conditions. Enhancement mode N-channel for optimal switching characteristics. Low Rds(on) reduces power losses and increases efficiency. Maximum power dissipation up to 25 W for thermal resilience.

Typical gate charge optimizes switching speeds and reduces driver losses. Packaged for easy integration in industrial, automotive, and electronics manufacturing.

This MOSFET is ideal for use in industrial control systems, power supplies, automotive electronics, and other semiconductor applications requiring reliable and high-performance discrete transistors. Its approved specifications and compact design make it a trusted component for engineers and manufacturers.

Explore more Vishay semiconductor products and related MOSFET components at EnvMart for advanced electronics and power management solutions.

Vishay N-Channel MOSFET 7.7 A 60 V Enhancement 3-Pin TO-252 IRFR014TRPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 7.7 A, making it suitable for various medium-power applications.

It has a maximum drain-source voltage rating of 60 V, which provides adequate overhead for medium voltage circuits.

This MOSFET is packaged in a TO-252 surface mount package, which allows for easy integration into PCB layouts.

The operating temperature range for this unit is from -55°C to 150°C, supporting diverse environmental conditions.

It has a maximum power dissipation rating of 25 W, allowing it to function reliably in power handling applications.

The maximum drain-source resistance is 200 mΩ, which helps to optimize conduction losses during operation.

The typical gate charge is 11 nC at the specified gate-source voltage, facilitating fast switching performance.

The TO-252 package of this MOSFET features 3 pins, suitable for surface mount applications.

The forward voltage drop is 1.6 V, which supports stable performance in circuits requiring reliable voltage control.

This model uses an N-channel type, which is designed for enhancement mode operation to improve switching efficiency.

It is suitable for applications such as power management, motor controls, and switching regulators in industrial and automotive electronics.

The country of origin for this MOSFET is India.

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