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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | IRFR014TRPBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | IRFR |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7.7A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 200mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 25W |
| Typical Gate Charge Qg @ Vgs | 11nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.6V |
Vishay IRFR014TRPBF is a robust N-Channel MOSFET transistor designed for enhancement mode operation with a maximum drain current of 7.7 A and drain-source voltage of 60 V. Packaged in a compact TO-252 surface mount package with 3 pins, it is engineered to provide efficient switching in electronic circuits.
This MOSFET supports a maximum power dissipation of 25 W, allowing it to function reliably in applications requiring medium power handling, such as power management, motor controls, and switching regulators. The transistor operates over a wide temperature range from -55°C up to 150°C which makes it suitable for industrial, automotive, and general electronic applications.
The device features a low maximum drain-source resistance of 200 milliohms which reduces conduction losses and enhances energy efficiency during operation. Its typical gate charge of 11 nanocoulombs at specified gate-source voltage allows fast switching with minimal delay.
The body size dimensions (L x W x H) of 6.73 mm by 6.22 mm by 2.38 mm ensures it fits standard PCB layouts requiring surface mount components. The forward voltage drop of 1.6 V supports stable performance in circuits requiring reliable voltage control.
Maximum continuous drain current of 7.7 A suitable for a variety of power electronic applications. Drain-source voltage rating of 60 V provides adequate overhead for medium voltage circuits. Surface mount TO-252 package promotes compact and efficient circuit design.
Operation from -55°C to 150°C to withstand harsh environmental conditions. Enhancement mode N-channel for optimal switching characteristics. Low Rds(on) reduces power losses and increases efficiency. Maximum power dissipation up to 25 W for thermal resilience.
Typical gate charge optimizes switching speeds and reduces driver losses. Packaged for easy integration in industrial, automotive, and electronics manufacturing.
This MOSFET is ideal for use in industrial control systems, power supplies, automotive electronics, and other semiconductor applications requiring reliable and high-performance discrete transistors. Its approved specifications and compact design make it a trusted component for engineers and manufacturers.
Explore more Vishay semiconductor products and related MOSFET components at EnvMart for advanced electronics and power management solutions.
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