onsemi N-Channel MOSFET 2.1 A 30 V Enhancement Mode 3-Pin SOT-23 MGSF1N03LT1G

onsemi MGSF1N03LT1G is a high-quality N-Channel MOSFET designed for efficient switching and amplification in electronic circuits. It features a maximum continuous drain current of 2.1 A and a maximum drain-source voltage of 30 V. Operating in enhancement mode, it is housed in a compact 3-pin SOT-23 surface mount package, ideal for modern electronics manufacturing and automated PCB assembly.

This MOSFET offers a low drain-source resistance of 145 milliohms, reducing power losses during conduction and improving the overall energy efficiency of the system. Its typical gate charge of 6 nanocoulombs facilitates quick switching, making it suitable for high-frequency applications.

The device boasts a maximum power dissipation rating of 690 milliwatts and operates reliably across a broad temperature range from -55°C to 150°C, ensuring durability in demanding industrial, automotive, and consumer electronics environments. Additionally, the maximum gate-source voltage is rated at -20 V to +20 V, providing safety margin for device gate control.

Conforming to the stringent AEC-Q101 automotive quality standard, the MGSF1N03LT1G is suitable for automotive and other rugged applications. The package dimensions are approximately 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height, suitable for compact devices.

Typical industrial applications include power management, signal switching, DC-DC converters, automotive electronics, and general-purpose amplification where space and power efficiency are critical.

Maximum continuous drain current rated at 2.1 A for efficient power handling. Compact SOT-23 surface mount package with 3 pins suitable for space-constrained PCB designs. Low maximum drain-source resistance of 145 milliohms ensures minimal conduction losses.

High maximum power dissipation of 690 mW supports reliable thermal performance. Wide operating temperature range from -55°C to 150°C supports harsh electronics environments. Typical gate charge of 6 nC enables fast switching performance.

Maximum gate-source voltage ratings of -20 V to +20 V to enhance gate protection. AEC-Q101 automotive standard compliant, ensuring robustness for automotive applications. Package dimensions approximately 3.04 mm length, 1.4 mm width, and 1.01 mm height.

EnvMart offers this onsemi MOSFET model MGSF1N03LT1G as part of its extensive collection of discrete semiconductor components, designed to meet demanding industrial and automotive standards.