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Toshiba N-Channel MOSFET 43 A 60 V Enhancement 3-Pin TO-220 TK30E06N1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Height | 15.1mm |
| Length | 10.16mm |
| Model | TK30E06N1 |
| Width | 4.45mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 43A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 15mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 53W |
| Typical Gate Charge Qg @ Vgs | 16nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
| N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 Toshiba TK30E06N1,S1X(SBrand | Toshiba |
Key Features
- Designed for high power switching applications with a TO-220 package.
- Features an enhancement mode channel for efficient operation.
- Maximum power dissipation of 53 watts for reliable performance.
- Low maximum drain-source resistance of 15 milliohms to reduce conduction losses.
- Typical gate charge of 16 nanocoulombs allows fast switching operation.
- Operates in a wide temperature range up to 150°C maximum operating temperature.
- Through-hole mount type with 3 pins for easy PCB integration.
- Compact dimensions of 15.1mm height, 10.16mm length, and 4.45mm width.
Product Description
The Toshiba TK30E06N1 is a high-performance N-Channel MOSFET transistor optimized for power switching and amplification tasks in electronic circuits.
Featuring a TO-220 3-pin package and through-hole mounting, it offers versatility for industrial and commercial applications such as power management, motor control, and switching power supplies.
This MOSFET supports a maximum continuous drain current of 43 amperes and can withstand a drain-source voltage up to 60 volts, making it suitable for medium voltage high current circuits.
It operates in enhancement mode with a low maximum drain-source resistance of 15 milliohms, contributing to efficient power conversion and heat dissipation. Typical gate charge is 16 nanocoulombs at the specified gate-source voltage, allowing fast switching speeds critical for PWM and digital control systems.
The device withstands operating temperatures as high as 150°C, granting robustness for use in harsh industrial and automotive environments. Physical dimensions are compact at 15.1 mm height, 10.16 mm length, and 4.45 mm width, optimizing PCB space utilization.
The forward voltage drop is typically near -1.2 volts ensuring low conduction losses during operation. This component does not carry automotive-specific standards or approvals and does not comply with additional standard certifications.
Designed for industrial and electronics power applications. Commonly used in DC-DC converters, motor drivers, power amplifiers, and switching regulator circuits. Robust performance in construction, manufacturing, and automotive electronics systems.
Its robust electrical characteristics and convenient packaging make the Toshiba TK30E06N1 a favored choice in semiconductor discrete components for electronics design engineers. Explore a wide range of semiconductor solutions in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The Toshiba TK30E06N1 has a maximum continuous drain current of 43 amperes.
This model can withstand a maximum drain-source voltage of 60 volts.
It has a maximum power dissipation rating of 53 watts.
The typical gate charge is 16 nanocoulombs at the specified gate-source voltage.
The dimensions are 15.1 mm in height, 10.16 mm in length, and 4.45 mm in width.
The maximum operating temperature is 150°C.
It features a through-hole mount type with 3 pins for easy PCB integration.
The maximum drain-source resistance is 15 milliohms, which helps reduce conduction losses.
This model is suitable for applications such as power management, motor control, and switching power supplies.
The channel type is N-channel, operating in enhancement mode.
The forward voltage drop is typically near -1.2 volts, ensuring low conduction losses during operation.
The maximum gate-source voltage is -20V to +20V.
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