Toshiba TK N-Channel MOSFET, 207 A Continuous Drain Current, 100 V Drain Source Voltage, 255 W Power Dissipation TK100E10N1

Toshiba TK100E10N1 N-Channel MOSFET is a robust and high-current rated transistor designed for efficient power switching and amplification in industrial and electronic applications.

This surgical enhancement mode MOSFET supports a continuous drain current of 207 A, making it ideal for power management tasks requiring high current capacity.

The device operates with a maximum drain source voltage of 100 V and dissipates power up to 255 watts, which suits demanding environments including industrial controls and power supply circuits.

The TO-220 package offers through-hole mounting with 3 pins, facilitating easy integration into PCB designs requiring high power handling.

Its low maximum drain source resistance of 3.4 milliohms minimizes conduction losses for higher efficiency. The maximum gate source voltage range (-20 V to +20 V) ensures safe gate operation.

The typical gate charge at 140 nanocoulombs allows for switching optimization in various power electronics applications such as motor control, power inverters, and DC-DC converters.

The device’s maximum operating temperature of 150°C supports use in harsh industrial and commercial environments. Its compact physical dimensions (15.1 mm height, 10.16 mm length, 4.45 mm width) enable flexible PCB layout designs.

The 3-pin TO-220 package supports through-hole mounting for reliable mechanical and electrical connections. This Toshiba MOSFET is suitable for applications including industrial power control, automotive electronics, HVAC systems, and manufacturing equipment.

EnvMart offers this high-quality semiconductor device to support your precise and efficient electronic component sourcing requirements.