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onsemi N-Channel Power MOSFET 750 mA, 20 V, Enhancement Mode, 3-Pin SOT-23 Package MGSF1N02LT1G

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.01mm
Length 3.04mm
Model MGSF1N02LT1G
Width 1.4mm
Mount Type Surface
Series MGSF1
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 750mA
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 130mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 400mW
Typical Gate Charge Qg @ Vgs 203nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.5V

Key Features

  • Operates in enhancement mode for reliable switching performance.
  • Features a low typical gate charge of 203 nC at Vgs.
  • Maximum power dissipation of 400 mW ensures efficient thermal management.
  • Compact package with 3 pins in a surface mount SOT-23 form factor.
  • Wide operating temperature range from -55°C to 150°C for diverse applications.
  • Maximum drain-source resistance Rds(on) of 130 mΩ for low conduction loss.
  • Gate source voltage rated at ±20 V for robust gate control.
  • Typical forward voltage drop Vf of 1.5 V enhances power efficiency.

Product Description

The onsemi MGSF1N02LT1G is a precision-engineered N-Channel Power MOSFET designed for a variety of electronic applications requiring efficient switching and low power loss. This device supports a maximum continuous drain current of 750 mA and a maximum drain-source voltage of 20 V, making it suitable for medium-power circuits.

Encapsulated in a compact surface mount SOT-23 3-pin package, the MOSFET offers an enhancement mode channel operation that ensures fast switching and reliable performance in power management, amplification, and switching circuits.

The device is rated for a maximum power dissipation of 400 mW, with a robust operating temperature range from -55°C to +150°C, supporting both industrial and automotive applications excluding automotive standard certifications. Its low typical gate charge of 203 nC at the specified gate voltage enhances switching speeds and power efficiency.

This MOSFET features a low on-resistance of 130 mΩ which minimizes conduction losses and improves overall circuit efficiency. The gate-source voltage withstand rating of ±20 V offers resilience in diverse designs.

Physically, the MOSFET measures 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height, allowing for high-density PCB layouts. The typical forward voltage drop of 1.5 V optimizes power use, beneficial in battery-powered or low-voltage systems.

Operates in enhancement mode for reliable switching performance. Low typical gate charge of 203 nC for efficient gate control. Compact 3-pin SOT-23 surface mount package. Wide temperature range from -55°C to 150°C for robust operation.

Maximum power dissipation of 400 mW. Low Rds(on) of 130 mΩ reduces conduction losses. Gate-source voltage tolerance of ±20 V. Dimensions: 3.04 x 1.4 x 1.01 mm for space-efficient design.

This MOSFET is widely used in industrial, electronic design, consumer electronics, and power management applications requiring dependable MOSFET performance. Utilities include DC/DC converters, switching regulators, and signal amplification.

Explore more onsemi products and MOSFETs on EnvMart for your next project to ensure quality and reliability.

onsemi N-Channel Power MOSFET 750 mA, 20 V, Enhancement Mode, 3-Pin SOT-23 Package MGSF1N02LT1G
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Frequently Asked Questions

The maximum continuous drain current for this model is 750 mA.

It can handle a maximum drain-source voltage of 20 V.

The typical gate charge at the specified gate voltage is 203 nC.

The maximum power dissipation for this model is rated at 400 mW.

The maximum drain-source resistance Rds(on) is 130 mΩ.

This model operates within a temperature range of -55°C to +150°C.

The dimensions of the SOT-23 package are 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height.

This device uses an enhancement mode N-channel configuration.

The gate-source voltage is rated at ±20 V.

The typical forward voltage drop is 1.5 V.

The SOT-23 package has 3 pins.

It is suitable for applications in power management, amplification, and switching circuits, including DC/DC converters and switching regulators.

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