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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.01mm |
| Length | 3.04mm |
| Model | MGSF1N02LT1G |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | MGSF1 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 750mA |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 130mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 400mW |
| Typical Gate Charge Qg @ Vgs | 203nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
The onsemi MGSF1N02LT1G is a precision-engineered N-Channel Power MOSFET designed for a variety of electronic applications requiring efficient switching and low power loss. This device supports a maximum continuous drain current of 750 mA and a maximum drain-source voltage of 20 V, making it suitable for medium-power circuits.
Encapsulated in a compact surface mount SOT-23 3-pin package, the MOSFET offers an enhancement mode channel operation that ensures fast switching and reliable performance in power management, amplification, and switching circuits.
The device is rated for a maximum power dissipation of 400 mW, with a robust operating temperature range from -55°C to +150°C, supporting both industrial and automotive applications excluding automotive standard certifications. Its low typical gate charge of 203 nC at the specified gate voltage enhances switching speeds and power efficiency.
This MOSFET features a low on-resistance of 130 mΩ which minimizes conduction losses and improves overall circuit efficiency. The gate-source voltage withstand rating of ±20 V offers resilience in diverse designs.
Physically, the MOSFET measures 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height, allowing for high-density PCB layouts. The typical forward voltage drop of 1.5 V optimizes power use, beneficial in battery-powered or low-voltage systems.
Operates in enhancement mode for reliable switching performance. Low typical gate charge of 203 nC for efficient gate control. Compact 3-pin SOT-23 surface mount package. Wide temperature range from -55°C to 150°C for robust operation.
Maximum power dissipation of 400 mW. Low Rds(on) of 130 mΩ reduces conduction losses. Gate-source voltage tolerance of ±20 V. Dimensions: 3.04 x 1.4 x 1.01 mm for space-efficient design.
This MOSFET is widely used in industrial, electronic design, consumer electronics, and power management applications requiring dependable MOSFET performance. Utilities include DC/DC converters, switching regulators, and signal amplification.
Explore more onsemi products and MOSFETs on EnvMart for your next project to ensure quality and reliability.
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