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Toshiba SSM3 Type P-Channel MOSFET 4.4 A 20 V Enhancement Mode 3-Pin UFM SSM3J130TU(TE85L)

Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin Japan
Brand Toshiba
Height 700μm
Length 2.1mm
Model SSM3J130TU(TE85L)
Width 1.7mm
Mount Type Surface
Series SSM3
Maximum Operating Temperature 150°C
Package Type UFM
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 4.4A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 63mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 800mW
Typical Gate Charge Qg @ Vgs 24.8nC
Maximum Gate Source Voltage Vgs -8, +8V
Forward Voltage Vf 830mV

Key Features

  • Type P channel suitable for high-efficiency power control circuits.
  • Maximum drain-source resistance of 63 milliohms ensuring low conduction losses.
  • Supports gate-source voltage range from -8 V to +8 V for flexible drive conditions.
  • Maximum power dissipation rating of 800 milliwatts for robust operation.
  • Wide operating temperature range from -55°C to 150°C for reliable performance in harsh environments.
  • Surface mount device (SMD) facilitates automated assembly and high-density layouts.
  • Ideal for electronic, power management, and semiconductor discrete component applications.

Product Description

Toshiba SSM3J130TU(TE85L) is a high-performance P-Channel Enhancement Mode MOSFET designed for discrete semiconductor applications requiring efficient power switching. It features a maximum continuous drain current of 4.4 A and a maximum drain-source voltage of 20 V, making it suitable for power management circuits and electronic components in various industries.

The device is housed in a compact UFM surface mount package with three pins, allowing easy integration into modern PCB designs with excellent reliability and minimal space usage. Its low maximum drain-source resistance (63 milliohms) minimizes power losses for enhanced efficiency.

This MOSFET supports a gate-source voltage range from -8 V to +8 V, providing flexibility in drive conditions to accommodate diverse circuit designs. With power dissipation up to 800 milliwatts, it operates effectively under thermal stress.

Operating temperature range from -55°C to 150°C ensures stable performance even in harsh industrial or automotive environments. The device's compact physical dimensions (2.1 mm length, 1.7 mm width, 700 μm height) support dense board layouts for applications demanding space efficiency.

The Toshiba SSM3J130TU(TE85L) MOSFET is widely used in electronic components, power and connectors sectors, and discrete semiconductor applications such as power regulation, switching, and amplifying circuits.

Type P channel suitable for high-efficiency power control circuits. Maximum drain-source resistance of 63 milliohms ensuring low conduction losses. Supports gate-source voltage range from -8 V to +8 V for flexible drive conditions.

Maximum power dissipation rating of 800 milliwatts for robust operation. Wide operating temperature range from -55°C to 150°C for reliable performance in harsh environments. Compact dimensions: 2.1 mm length, 1.7 mm width, and 700 μm height for space-saving PCB design.

Surface mount device (SMD) facilitates automated assembly and high-density layouts. Ideal for electronic, power management, and semiconductor discrete component applications.

This product is manufactured in Japan ensuring high quality and reliability. It is recommended for use in industrial, electronic, power management, and commercial semiconductor applications. Explore more MOSFETs and semiconductor components in the Electronics & Electricals category at EnvMart for your design and manufacturing needs.

Toshiba SSM3 Type P-Channel MOSFET 4.4 A 20 V Enhancement Mode 3-Pin UFM SSM3J130TU(TE85L)
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Frequently Asked Questions

The maximum continuous drain current for the Toshiba SSM3J130TU(TE85L) is 4.4 A.

This MOSFET has a maximum drain-source voltage of 20 V.

It supports a gate-source voltage range from -8 V to +8 V.

The maximum power dissipation rating is 800 milliwatts.

The dimensions are 2.1 mm in length, 1.7 mm in width, and 700 μm in height.

The maximum drain-source resistance is 63 milliohms.

The operating temperature range is from -55°C to 150°C.

This model uses a UFM surface mount package.

It is suitable for power management circuits, electronic components, and discrete semiconductor applications.

This MOSFET has a pin count of 3.

The channel type is P-Channel Enhancement Mode.

This product is manufactured in Japan.

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