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DiodesZetex Isolated 2 Type N, Type P-Channel Enhancement MOSFET, 700mA, 20V, 1W, 6-Pin SOT-563 DMC2400UV-7

Category MOSFET Dual Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 0.6mm
Length 1.7mm
Model DMC2400UV-7
Width 1.25mm
Mount Type Surface
Maximum Operating Temperature +150°C
Package Type SOT-563
Minimum Operating Temperature -55°C
Standards/Approvals AEC-Q101, RoHS, MIL-STD-202, UL 94V-0, J-STD-020
Pin Count 6
Number of Elements per Chip 2
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200
Channel Type Type N, Type P
Maximum Continuous Drain Current Id 700mA
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 1.5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 1W
Typical Gate Charge Qg @ Vgs 0.5nC
Maximum Gate Source Voltage Vgs -12, -8, +12, +8V
Forward Voltage Vf 0.7V
Transistor Configuration Isolated

Key Features

  • This dual N and P-channel MOSFET comes in a compact 6-pin SOT-563 surface mount package.
  • Maximum power dissipation of 1 watt supports moderate power applications.
  • Maximum drain-source resistance of 1.5 ohms ensures low conduction losses.
  • Wide operating temperature range between -55°C and +150°C suits automotive and industrial environments.
  • Typical gate charge is low at 0.5nC which enhances switching efficiency.
  • Pin configuration and isolated transistor design help in easy integration into circuits.
  • Compliance with AEC-Q101, RoHS, MIL-STD-202, UL 94V-0, and J-STD-020 standards guarantee reliability.
  • Size dimensions are 1.7mm length, 1.25mm width, and 0.6mm height for compact PCB layouts.

Product Description

DiodesZetex DMC2400UV-7 is a dual transistor MOSFET device combining isolated 2 Type N and Type P-channel enhancement mode transistors. Designed for surface mount technology, it comes in a small 6-pin SOT-563 package measuring 1.7mm in length, 1.25mm in width, and 0.6mm in height, allowing for compact PCB layouts in modern electronic circuits.

This MOSFET supports a maximum continuous drain current of 700mA and can tolerate a maximum drain-source voltage (Vds) of 20 volts, making it suitable for low to moderate power switching applications. It features a maximum power dissipation of 1 watt and a maximum drain-source on resistance (Rds) of 1.5 ohms, which minimizes conduction losses and improves energy efficiency in switching operations.

The transistor operates in enhancement mode with a typical gate charge of 0.5 nanocoulombs at specified gate voltages, ensuring efficient switching with minimal gate drive requirements. It withstands gate-source voltages between -12V to +12V for reliable operation under varied conditions.

It operates reliably in harsh temperature environments with a wide operating temperature range from -55°C to +150°C, making it ideal for automotive, industrial, and power management applications. The device adheres to stringent industry standards, including AEC-Q101 for automotive reliability, RoHS for hazardous substance compliance, MIL-STD-202 for military environment testing, UL 94V-0 flame retardance, and J-STD-020 for lead-free soldering compliance.

With its isolated transistor configuration and automotive-grade certifications (AEC-Q100, AEC-Q101, AEC-Q200), the DMC2400UV-7 is designed for demanding industrial, automotive electronics, consumer electronics, and power supply circuits. Its dual N/P-channel provides flexible design options in compact spaces.

This MOSFET is manufactured in China and conforms to the highest quality and performance standards for discrete semiconductors. It is an excellent choice for engineers requiring reliable transistor switches with dual-channel functionality in various electronic control systems.

This dual N and P-type transistor MOSFET features isolated construction for improved circuit integration. Its compact SOT-563 surface mount package enables high density PCB designs. Designed to operate efficiently with low on-resistance and gate charge values.

Extensive compliance with automotive and industry reliability standards. Suitable for automotive, power management, industrial, and consumer electronics applications. Wide temperature range operation ensures performance in extreme environments.

Declared product condition is new with factory standards compliance. Explore more electronic components and semiconductors on EnvMart to find tailored solutions for your industrial and manufacturing needs.

Explore more products in our MOSFET Dual Transistor category.

DiodesZetex Isolated 2 Type N, Type P-Channel Enhancement MOSFET, 700mA, 20V, 1W, 6-Pin SOT-563 DMC2400UV-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 700mA.

It can tolerate a maximum drain-source voltage (Vds) of 20 volts.

This MOSFET measures 1.7mm in length, 1.25mm in width, and 0.6mm in height.

The maximum power dissipation is 1 watt.

The typical gate charge is low at 0.5 nanocoulombs (nC).

It operates within a wide temperature range from -55°C to +150°C.

It complies with AEC-Q101, RoHS, MIL-STD-202, UL 94V-0, and J-STD-020 standards.

The maximum drain-source on-resistance (Rds) is 1.5 ohms.

It comes in a compact 6-pin SOT-563 surface mount package.

This model features an isolated configuration with dual N and P-channel enhancement mode transistors.

The maximum gate-source voltage (Vgs) is between -12V to +12V.

It is suitable for automotive, industrial, and power management applications.

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