DiodesZetex Dual Type P and Type N-Channel MOSFET 21 A, 30 V, Enhancement Mode, 8-Pin PDI3333 Package DMC3016LDV-7

DiodesZetex DMC3016LDV-7 dual Type P and Type N-channel MOSFET is a high-performance component designed for power management and switching applications in industrial and electronic sectors. This device features a dual transistor configuration combining P-channel and N-channel MOSFETs in an 8-pin surface mount PDI3333 package, enabling efficient space-saving PCB designs.

With a maximum continuous drain current rating of 21 A and a drain-source voltage of 30 V, the DMC3016LDV-7 is capable of handling significant power loads. The device operates in enhancement mode with a low maximum drain-source resistance of 38 milliohms, ensuring minimal conduction losses and better energy efficiency.

The MOSFETs are rated to operate in extreme temperature conditions ranging from -55°C to 150°C, making them suitable for industrial, automotive, and other demanding environments. The typical gate charge is 9.5 nanocoulombs, facilitating rapid switching performance essential for high-frequency applications.

Protective features include a maximum gate-source voltage of -20 to +20 volts and a forward voltage of 0.7 volts, safeguarding the transistor gates and supporting efficient conduction. The height, length, and width of the package are 0.8 mm, 3.15 mm, and 3.15 mm respectively, optimized for automated surface-mount assembly.

This MOSFET Dual Transistor component finds usage in diverse industrial applications including power converters, switching regulators, motor control, and automotive electronics. Its robust electrical and thermal characteristics contribute to reliable and long-lasting operation in critical systems.

Features dual N/P-channel MOSFET transistors in a compact 8-pin PDI3333 package. Maximum continuous drain current of 21 amperes ensures robust power handling. Drain-source voltage rating of 30 volts suitable for low voltage switching applications.

Enhancement mode channel operation for efficient transistor switching. Low maximum drain-source resistance of 38 milliohms aids in power efficiency. Operates reliably from -55°C up to 150°C, suitable for industrial environments.

Designed for surface mount technology to enable compact PCB layouts. Dual transistor configuration enhances circuit design flexibility. Typical gate charge of 9.5 nC provides fast switching speeds. Maximum gate-source voltage rating of ±20 volts ensures gate protection.

Precision forward voltage of 0.7 volts supports efficient conduction.

This product is ideal for engineers and designers seeking a reliable dual MOSFET solution for electronic semiconductor assemblies. Explore the Electronics & Electricals category at EnvMart for more semiconductor components and MOSFET types.