DiodesZetex Dual 2 Type P-Channel MOSFET, -4.5 A, 20 V, Enhancement Mode, 6-Pin DFN Package DMP2065UFDB-7

DiodesZetex DMP2065UFDB-7 is a dual type P-Channel MOSFET designed for use in electronic circuits requiring efficient switching with low voltage and moderate current capacity. Operating at a continuous drain current of -4.5 A and maximum drain-source voltage of 20 V, this device delivers stable performance in a range of automotive, industrial, and general electronic applications.

This MOSFET features an enhancement mode channel and a compact 6-pin DFN package optimized for surface mounting on printed circuit boards. Its small size with dimensions of 2 mm by 2 mm by 0.56 mm contributes to space-saving designs. The device supports power dissipation up to 1.5 W, making it suitable for moderate load conditions.

It is qualified to stringent automotive standards such as AEC-Q100, AEC-Q200, and AEC-Q101, affirming its reliability and robustness for demanding environments. The component also complies with various safety and environmental standards including UL 94V-0, RoHS, J-STD-020, and MIL-STD-202.

The typical gate charge is 10.2 nC at a gate-source voltage of 12 V, ensuring efficient switching with minimal gate drive power. Operating temperatures range from -55°C up to +150°C, which covers a broad spectrum of applications. The transistor's dual element per chip configuration allows dual switching functionality in one compact package.

This MOSFET's forward voltage of -0.7 V supports efficient conduction, reducing power loss across the device. Designed for automated manufacturing, the surface mount DFN package facilitates streamlined insertion and soldering processes, improving production throughput.

Manufactured in China, this product is ideal for use in power management circuits, automotive electronics, industrial controls, and other sectors requiring reliable semiconductor components.

Dual P-channel MOSFET in 6-pin DFN package. Enhancement mode operation with -4.5 A maximum continuous drain current. 20 V maximum drain-source voltage rating. Power dissipation up to 1.5 W for moderate load conditions. Wide temperature operation from -55°C to +150°C.

Compliant with automotive and environmental standards including AEC-Q101 and RoHS. Compact dimensions of 2 mm x 2 mm x 0.56 mm suitable for space-constrained designs. Low typical gate charge of 10.2 nC enabling efficient switching.

Forward voltage of -0.7 V reduces conduction losses. Surface mount design for automated assembly. Explore more in the Electronics & Electricals category for high-quality MOSFETs and other semiconductor components available on EnvMart.

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