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Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET 5.3 A, 60 V Enhancement 8-Pin SOIC SI4559ADY-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.5mm |
| Length | 5mm |
| Model | SI4559ADY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 5.3A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 72mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.4W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Transistor Configuration | Isolated |
Key Features
- Dual type P and type N-channel MOSFET transistor suitable for high efficiency switching.
- Enhanced performance with low maximum drain-source resistance of 72 mΩ.
- Surface mount SOIC package with 8 pins for compact PCB integration.
- Capability to operate between minimum -55°C and maximum 150°C temperatures.
- Typical gate charge of 13 nC for improved switching response.
- Maximum power dissipation of 3.4 W ensuring robust thermal handling.
- Isolated transistor configuration for enhanced electrical isolation.
- Compact dimensions of 1.5 mm height, 4 mm width, and 5 mm length.
Product Description
Vishay SI4559ADY-T1-GE3 Isolated TrenchFET is a high-performance dual N and P-type enhancement mode MOSFET transistor designed for discrete semiconductor applications. It features a maximum continuous drain current of 5.3 A and a drain-source voltage rating of 60 V, making it ideal for switching, amplification, and power control in demanding electronic circuits.
The device comes in a compact surface mount SOIC package with 8 pins, supporting space-saving PCB layouts. Its low maximum drain-source resistance of 72 mΩ and typical gate charge value of 13 nC contribute to efficient switching behavior with minimal power loss.
Operating temperature ranges from -55°C to 150°C ensure reliable performance in various industrial and commercial electronics environments. The transistor is electrically isolated, allowing safe and effective integration in sensitive electronic assemblies.
With a power dissipation capability of 3.4 W, the MOSFET can handle substantial thermal loads, supporting stable operation during continuous use.
Its precise dimensions (height 1.5 mm, width 4 mm, length 5 mm) enable versatile use in compact electronic designs. Although it does not conform to automotive standards, it is suitable for general industrial, laboratory, and electronic power management applications.
Dual type P and type N-channel MOSFET transistor suitable for high efficiency switching. Enhanced performance with low maximum drain-source resistance of 72 mΩ. Surface mount SOIC package with 8 pins for compact PCB integration.
Capability to operate between minimum -55°C and maximum 150°C temperatures. Typical gate charge of 13 nC for improved switching response. Maximum power dissipation of 3.4 W ensuring robust thermal handling. Isolated transistor configuration for enhanced electrical isolation.
Compact dimensions of 1.5 mm height, 4 mm width, and 5 mm length. Manufactured in China with no automotive standard compliance.
This Vishay MOSFET model SI4559ADY-T1-GE3 is designed primarily for power electronics applications requiring efficient switching and controllability. Its robust specifications meet the needs of industrial, laboratory, and general electronic assembly contexts.
Explore Vishay MOSFET products and other discrete semiconductors at EnvMart for quality and comprehensive industrial electronics solutions.
Explore more products in our MOSFET Dual Transistor category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.3 A.
This MOSFET has a maximum drain-source voltage rating of 60 V.
It can handle a maximum power dissipation of 3.4 W.
The dimensions of this MOSFET are 1.5 mm in height, 4 mm in width, and 5 mm in length.
The typical gate charge for this model is 13 nC.
It operates within a temperature range of -55°C to 150°C.
This model comes in a surface mount SOIC package with 8 pins.
It supports dual type P and type N-channel configurations.
The maximum drain-source resistance for this model is 72 mΩ.
Yes, this model features an isolated transistor configuration for enhanced electrical isolation.
It is suitable for general industrial, laboratory, and electronic power management applications.
This MOSFET is manufactured in China.
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