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DiodesZetex Isolated Dual Type P and Type N Channel Enhancement MOSFET 7.5 A, 40 V, 8-Pin SOIC DMC4040SSD-13

Category MOSFET Dual Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.5mm
Length 4.95mm
Model DMC4040SSD-13
Width 3.95mm
Mount Type Surface
Maximum Operating Temperature +150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Standards/Approvals J-STD-020, MIL-STD-202, RoHS, UL 94V-0, AEC-Q101
Pin Count 8
Number of Elements per Chip 2
Channel Type Type P, Type N
Maximum Continuous Drain Current Id 7.5A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 45mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.14W
Typical Gate Charge Qg @ Vgs 14nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -0.7V
Transistor Configuration Isolated

Key Features

  • Isolated dual MOSFET with type P and type N channels for versatile applications.
  • Maximum continuous drain current of 7.5 amperes for robust performance.
  • Drain source voltage up to 40 volts suitable for low voltage power circuits.
  • Compact 8-pin SOIC surface mount package with small dimensions of 4.95 mm length and 3.95 mm width.
  • Low drain source resistance of 45 milliohms to minimize power losses.
  • Enhanced power dissipation capability at 2.14 watts for reliable operation.
  • Wide operating temperature range from -55°C to +150°C for industrial environments.
  • Compliance with J-STD-020, MIL-STD-202, RoHS, UL 94V-0, and AEC-Q101 standards.

Product Description

DiodesZetex DMC4040SSD-13 is an isolated dual MOSFET product combining two types of channels: type P-channel and type N-channel, designed for enhancement mode operation. It is suited for power electronic circuits requiring efficient switching and compact footprint.

This device supports a maximum continuous drain current of 7.5 A and a drain source voltage rating of 40 V, accommodating medium power applications. Its low drain source resistance of 45 mΩ ensures reduced conduction losses, enhancing operational efficiency.

The MOSFET comes in an 8-pin SOIC surface mount package with compact dimensions of 4.95 mm length, 3.95 mm width, and 1.5 mm height, supporting high-density PCB layouts in industrial electronics.

Designed for reliability, it offers a maximum power dissipation of 2.14 W, and its operating temperature range spans from -55°C to +150°C, enabling use in harsh and demanding environments.

The device meets industry standards including J-STD-020, MIL-STD-202, RoHS, UL 94V-0 flammability rating, and AEC-Q101 automotive qualification, ensuring robustness and compliance for diverse applications.

Typical gate charge of 14 nC at Vgs ensures rapid switching, while the maximum gate source voltage rating of -20 to +20 V prevents gate damage and supports reliable gate control.

This MOSFET is suitable for industrial, automotive, electronic manufacturing, power management, and other fields requiring low voltage, high switching speed transistors with dual channel capabilities.

Isolated dual MOSFET with type P and type N channels for versatile applications. Maximum continuous drain current of 7.5 amperes for robust performance. Drain source voltage up to 40 volts suitable for low voltage power circuits.

Compact 8-pin SOIC surface mount package with small dimensions of 4.95 mm length and 3.95 mm width. Low drain source resistance of 45 milliohms to minimize power losses. Enhanced power dissipation capability at 2.14 watts for reliable operation.

Wide operating temperature range from -55°C to +150°C for industrial environments. Compliance with J-STD-020, MIL-STD-202, RoHS, UL 94V-0, and AEC-Q101 standards. Typical gate charge of 14 nanocoulombs enabling fast switching capability.

Maximum gate source voltage rating of -20 to +20 volts for gate control safety. Explore a comprehensive range of industrial and discrete semiconductor components at EnvMart to find compatible devices for your applications.

Explore more products in our MOSFET Dual Transistor category.

DiodesZetex Isolated Dual Type P and Type N Channel Enhancement MOSFET 7.5 A, 40 V, 8-Pin SOIC DMC4040SSD-13
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Frequently Asked Questions

The maximum continuous drain current for this model is 7.5 A.

This MOSFET has a drain source voltage rating of up to 40 V.

The dimensions of this model are 4.95 mm in length, 3.95 mm in width, and 1.5 mm in height.

It comes in an 8-pin SOIC surface mount package.

The typical gate charge at Vgs is 14 nC.

The maximum power dissipation capability is 2.14 W.

The operating temperature range spans from -55°C to +150°C.

It complies with J-STD-020, MIL-STD-202, RoHS, UL 94V-0, and AEC-Q101 standards.

This model features both type P-channel and type N-channel.

The maximum gate source voltage rating is -20 V to +20 V.

The maximum drain source resistance is 45 mΩ.

It is suitable for industrial, automotive, electronic manufacturing, and power management applications.

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