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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 4.95mm |
| Model | DMC4040SSD-13 |
| Width | 3.95mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | J-STD-020, MIL-STD-202, RoHS, UL 94V-0, AEC-Q101 |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 7.5A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 45mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.14W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.7V |
| Transistor Configuration | Isolated |
DiodesZetex DMC4040SSD-13 is an isolated dual MOSFET product combining two types of channels: type P-channel and type N-channel, designed for enhancement mode operation. It is suited for power electronic circuits requiring efficient switching and compact footprint.
This device supports a maximum continuous drain current of 7.5 A and a drain source voltage rating of 40 V, accommodating medium power applications. Its low drain source resistance of 45 mΩ ensures reduced conduction losses, enhancing operational efficiency.
The MOSFET comes in an 8-pin SOIC surface mount package with compact dimensions of 4.95 mm length, 3.95 mm width, and 1.5 mm height, supporting high-density PCB layouts in industrial electronics.
Designed for reliability, it offers a maximum power dissipation of 2.14 W, and its operating temperature range spans from -55°C to +150°C, enabling use in harsh and demanding environments.
The device meets industry standards including J-STD-020, MIL-STD-202, RoHS, UL 94V-0 flammability rating, and AEC-Q101 automotive qualification, ensuring robustness and compliance for diverse applications.
Typical gate charge of 14 nC at Vgs ensures rapid switching, while the maximum gate source voltage rating of -20 to +20 V prevents gate damage and supports reliable gate control.
This MOSFET is suitable for industrial, automotive, electronic manufacturing, power management, and other fields requiring low voltage, high switching speed transistors with dual channel capabilities.
Isolated dual MOSFET with type P and type N channels for versatile applications. Maximum continuous drain current of 7.5 amperes for robust performance. Drain source voltage up to 40 volts suitable for low voltage power circuits.
Compact 8-pin SOIC surface mount package with small dimensions of 4.95 mm length and 3.95 mm width. Low drain source resistance of 45 milliohms to minimize power losses. Enhanced power dissipation capability at 2.14 watts for reliable operation.
Wide operating temperature range from -55°C to +150°C for industrial environments. Compliance with J-STD-020, MIL-STD-202, RoHS, UL 94V-0, and AEC-Q101 standards. Typical gate charge of 14 nanocoulombs enabling fast switching capability.
Maximum gate source voltage rating of -20 to +20 volts for gate control safety. Explore a comprehensive range of industrial and discrete semiconductor components at EnvMart to find compatible devices for your applications.
Explore more products in our MOSFET Dual Transistor category.
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