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Nexperia Dual N-Channel MOSFET LFPAK56D Package, 18.2 A, 40 V, 8-Pin Surface Mount BUK9K25-40RAX

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Nexperia Dual N-Channel MOSFET LFPAK56D Package, 18.2 A, 40 V, 8-Pin Surface Mount BUK9K25-40RAX

Name: Nexperia Dual N-Channel MOSFET LFPAK56D Package, 18.2 A, 40 V, 8-Pin Surface Mount BUK9K25-40RAX
Brand: Nexperia
SKU: 414262
Price: 1.21 USD
Availability: InStock

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Category MOSFET Dual Transistor Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Model	BUK9K25-40RAX
Mount Type	Surface
Maximum Operating Temperature	175°C
Package Type	LFPAK56D
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Number of Elements per Chip	2
Channel Type	N
Maximum Continuous Drain Current Id	18.2A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	29mΩ
Maximum Power Dissipation Pd	32W
Typical Gate Charge Qg @ Vgs	6.3nC
Maximum Gate Source Voltage Vgs	-15V

Key Features

This MOSFET features a low maximum drain-source resistance of 29 mΩ for efficient switching.
The device supports a wide operating temperature range from -55°C to 175°C for high reliability.
It is automotive qualified to AEC-Q101 standard but has no automotive standard compliance declared.
Typical gate charge at Vgs is 6.3 nC, optimizing switching speed and efficiency.
Maximum gate-source voltage rating is ±15 V, ensuring robustness in drive applications.
The package LFPAK56D offers gull wing leads for high manufacturability and surface mount suitability.
The MOSFET is built with Application Specific repetitive avalanche silicon technology allowing repetitive avalanche capabilities.
Maximum power dissipation rating is 32 W to sustain moderate power loads.

Product Description

Nexperia BUK9K25-40RAX is a dual N-channel MOSFET semiconductor device packaged in the LFPAK56D form factor, optimized for surface mount assembly. Rated for a continuous drain current of 18.2 A at 40 V drain-source voltage, it supports demanding electronic designs requiring efficient power switching.

This MOSFET employs Application Specific repetitive avalanche silicon technology offering high robustness and reliability for industrial and automotive-style use cases, although it is not certified for automotive standards beyond AEC-Q101 qualification at 175 °C operating temperature.

The device features a low on-resistance drain-source channel resistance of 29 milliohms which reduces conduction losses, and a typical gate charge of 6.3 nC at gate-source voltage, enabling fast switching suitable for power management circuits, motor drives, and power converters.

The package design provides gull wing leads to enhance manufacturability and soldering efficiency in automated production lines. The chip includes two MOSFET elements per die, facilitating dual transistor functionalities in compact electronic modules.

Maximum continuous drain current: 18.2 A. Maximum drain-source voltage: 40 V. Low maximum Rds(on) of 29 mΩ. Gate-source voltage rating of ±15 V. Typical gate charge of 6.3 nC. Package type: LFPAK56D with gull wing leads.

Dual element chip technology. Maximum power dissipation of 32 W. Operating temperature range from -55°C to 175°C.

This MOSFET is suitable for industrial electronics, power supply units, automotive electronics design, motor control circuits, and general semiconductor discrete component applications. Its high-power handling and reproducible avalanche capability make it reliable for repetitive avalanche events in demanding product designs.

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