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DiodesZetex Isolated 2 Type N, Type P-Channel MOSFET Dual Transistor 700 mA, 20 V Enhancement, 6-Pin SOT-563 DMC2400UV-7

Category MOSFET Dual Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 0.6mm
Length 1.7mm
Model DMC2400UV-7
Width 1.25mm
Mount Type Surface
Maximum Operating Temperature +150°C
Package Type SOT-563
Minimum Operating Temperature -55°C
Standards/Approvals AEC-Q101, RoHS, MIL-STD-202, UL 94V-0, J-STD-020
Pin Count 6
Number of Elements per Chip 2
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200
Channel Type Type N, Type P
Maximum Continuous Drain Current Id 700mA
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 1.5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 1W
Typical Gate Charge Qg @ Vgs 0.5nC
Maximum Gate Source Voltage Vgs -12, -8, +12, +8V
Forward Voltage Vf 0.7V
Transistor Configuration Isolated

Key Features

  • Dual isolated N-Channel and P-Channel MOSFET configuration enhances circuit design versatility.
  • Compact 6-pin SOT-563 surface mount package measures 1.7 mm length, 1.25 mm width, and 0.6 mm height.
  • Maximum power dissipation rated at 1 W allows efficient thermal performance.
  • Features enhancement mode operation and low typical gate charge of 0.5 nC for fast switching.
  • Wide operating temperature range from -55°C to +150°C supports automotive and industrial applications.
  • Meets stringent standards including AEC-Q101, RoHS, MIL-STD-202, UL 94V-0, and J-STD-020.
  • Maximum drain-source resistance of 1.5 Ω ensures low conduction loss.
  • Forward voltage of 0.7 V optimizes energy efficiency and switching speed.

Product Description

DiodesZetex DMC2400UV-7 is an isolated dual MOSFET transistor combining type N and type P channels in a single compact 6-pin SOT-563 surface mount package. It supports enhancement mode operation with a maximum continuous drain current of 700 mA and can withstand drain-source voltages up to 20 V, making it well suited for low-voltage switching and amplification tasks in industrial, automotive, and consumer electronic applications.

This device offers a small footprint with dimensions of 1.7 mm length, 1.25 mm width, and 0.6 mm height, optimized for space-constrained PCB layouts. It provides a low maximum drain-source resistance (Rds) of 1.5 Ω, resulting in minimal conduction losses and improved efficiency. The typical gate charge of 0.5 nC promotes fast switching performance, critical for power management circuits.

The transistor maintains stable operation over a broad temperature range from -55°C to +150°C, qualified to meet automotive standards such as AEC-Q100, AEC-Q101, and AEC-Q200. It also complies with environmental and safety standards including RoHS, MIL-STD-202 testing, UL 94V-0 flammability rating, and J-STD-020 moisture sensitivity classifications.

Gate-source voltages are rated for ±8 V and ±12 V, allowing flexible drive voltages for diverse circuit requirements. A forward voltage of 0.7 V supports efficient switching operations. The device integrates two MOSFET elements per chip, ensuring isolated switching channels for type N and type P applications.

This MOSFET transistor is ideal for use in industrial automation systems, automotive electronic controls, power management modules, and consumer devices requiring high reliability and efficient switching at low voltages.

Explore the advanced range of semiconductor components from DiodesZetex to enhance your electronic designs with premium reliability and efficiency. Dual isolated N-Channel and P-Channel MOSFET configuration enhances circuit design versatility.

Compact 6-pin SOT-563 surface mount package measures 1.7 mm length, 1.25 mm width, and 0.6 mm height. Maximum power dissipation rated at 1 W allows efficient thermal performance. Features enhancement mode operation and low typical gate charge of 0.5 nC for fast switching.

Wide operating temperature range from -55°C to +150°C supports automotive and industrial applications. Meets stringent standards including AEC-Q101, RoHS, MIL-STD-202, UL 94V-0, and J-STD-020. Maximum drain-source resistance of 1.5 Ω ensures low conduction loss.

Forward voltage of 0.7 V optimizes energy efficiency and switching speed. Rated gate-source voltages include -12 V, -8 V, +8 V, and +12 V for robust control margin. Designed and manufactured in China to high automotive-grade quality standards.

EnvMart offers a comprehensive selection of MOSFETs and discrete semiconductors engineered for industrial, automotive, and advanced electronics applications. Browse our collection to find reliable DiodesZetex components and elevate your product designs.

Explore more products in our MOSFET Dual Transistor category.

DiodesZetex Isolated 2 Type N, Type P-Channel MOSFET Dual Transistor 700 mA, 20 V Enhancement, 6-Pin SOT-563 DMC2400UV-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 700 mA.

It can withstand a maximum drain-source voltage of 20 V.

This model comes in a SOT-563 package with dimensions of 1.7 mm length, 1.25 mm width, and 0.6 mm height.

The typical gate charge is 0.5 nC, which supports fast switching performance.

The rated gate-source voltages include -12 V, -8 V, +8 V, and +12 V.

The maximum power dissipation is rated at 1 W.

It has a maximum drain-source resistance of 1.5 Ω, ensuring low conduction loss.

The operating temperature range is from -55°C to +150°C.

It meets automotive standards AEC-Q100, AEC-Q101, and AEC-Q200.

This unit complies with RoHS, MIL-STD-202, UL 94V-0, and J-STD-020.

This chip integrates two MOSFET elements, providing isolated switching channels for both N and P types.

It features an isolated dual configuration with both N-channel and P-channel types.

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