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DiodesZetex Isolated 2 Type P, Type N-Channel MOSFET 8.2 A, 30 V Enhancement, 8-Pin SOIC DMC3026LSD-13

Category MOSFET Dual Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.5mm
Length 4.95mm
Model DMC3026LSD-13
Width 3.95mm
Mount Type Surface
Maximum Operating Temperature +150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Standards/Approvals MIL-STD-202, AEC-Q101, UL 94V-0, RoHS, J-STD-020
Pin Count 8
Number of Elements per Chip 2
Automotive Standard AEC-Q101
Channel Type Type P, Type N
Maximum Continuous Drain Current Id 8.2A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 29mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.6W
Typical Gate Charge Qg @ Vgs 6nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 0.7V
Transistor Configuration Isolated

Key Features

  • Dual N/P-channel MOSFET with isolated configuration for improved electrical performance.
  • Maximum continuous drain current of 8.2 Amperes suitable for moderate power applications.
  • 30 Volt maximum drain-source voltage enhancing operational reliability.
  • Low drain-source resistance of 29 milliohms ensuring efficient conduction.
  • Surface-mount 8-pin SOIC package optimized for space-saving PCB designs.
  • Enhancement mode suitable for switching and amplification applications.
  • High maximum power dissipation rating of 1.6 Watts supporting thermal stability.
  • Wide operating temperature range from -55°C to +150°C.

Product Description

DiodesZetex DMC3026LSD-13 is an isolated dual MOSFET semiconductor device featuring both P-type and N-type channels in a compact 8-pin SOIC surface-mount package. It supports a continuous drain current of 8.2 A and a drain-source voltage rating of 30 V, making it suitable for various electronic and industrial power management applications.

This MOSFET device operates in enhancement mode, providing efficient switching capabilities with a low maximum drain-source resistance of 29 milliohms, which ensures minimal power loss during operation. The typical gate charge of 6 nC at specified gate voltages enables fast switching while maintaining stable performance.

Designed to perform reliably across extreme temperature ranges from -55°C to +150°C, the device is robust for use in automotive, industrial, and electronic power circuits. Its isolated transistor configuration enhances electrical isolation between channels, which supports complex circuit designs requiring dual channel functionality.

The package dimensions are compact with a length of 4.95 mm, width of 3.95 mm, and height of 1.5 mm, allowing for space-efficient PCB layouts. Compliance with stringent standards such as MIL-STD-202, automotive AEC-Q101, UL 94V-0 flammability rating, RoHS environmental compliance, and J-STD-020 ensures high-quality manufacturing and operational safety.

Applications for this MOSFET include power amplification, switching regulators, DC-DC converters, and other electronic systems demanding reliable dual-channel MOSFETs in a small form factor. It is suitable for industrial, automotive, electronics manufacturing, and research laboratories.

Dual N/P-channel MOSFET with isolated configuration ensuring electrical performance. Maximum continuous drain current of 8.2 A for robust current handling. 30 V maximum drain-source voltage supporting moderate voltage applications.

Low Rds(on) of 29 mΩ enabling high efficiency. Compact 8-pin SOIC surface-mount package for optimized PCB use. Wide operating temperature range from -55°C to 150°C for harsh environments. Compliance with MIL-STD-202, AEC-Q101, UL 94V-0, RoHS, and J-STD-020 standards.

Explore more discrete semiconductor devices, MOSFETs, and electronic components at EnvMart for your engineering and manufacturing needs.

Explore more products in our MOSFET Dual Transistor category.

DiodesZetex Isolated 2 Type P, Type N-Channel MOSFET 8.2 A, 30 V Enhancement, 8-Pin SOIC DMC3026LSD-13
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Frequently Asked Questions

The maximum continuous drain current for this model is 8.2 Amperes.

The maximum drain-source voltage for this MOSFET is 30 Volts.

It features a low drain-source resistance of 29 milliohms, ensuring efficient conduction.

The dimensions of this model are 4.95 mm in length, 3.95 mm in width, and 1.5 mm in height.

This unit operates within a temperature range of -55°C to +150°C.

It is packaged in a compact 8-pin SOIC surface-mount configuration.

This model complies with MIL-STD-202, AEC-Q101, UL 94V-0, RoHS, and J-STD-020 standards.

The typical gate charge at specified gate voltages is 6 nC.

It is suitable for applications such as power amplification, switching regulators, and DC-DC converters.

The maximum power dissipation rating is 1.6 Watts, supporting thermal stability.

This model features both P-type and N-type channel configurations in an isolated setup.

The maximum gate-source voltage is -20V for the negative side and +20V for the positive side.

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