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onsemi Dual 2 N-Channel MOSFET 52 A, 40 V Enhancement, 8-Pin DFN NVMFD5C466NLWFT1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 6.1mm |
| Model | NVMFD5C466NLWFT1G |
| Width | 5.1mm |
| Mount Type | Surface |
| Series | NVMFD5C466NL |
| Maximum Operating Temperature | 175°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 52A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 12.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 16nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.9V |
| Transistor Configuration | Dual |
Key Features
- Features low Rds(on) of 12.6 milliohms for efficient conduction.
- Supports a maximum power dissipation of 40 W for reliable operation.
- Operates from -55°C up to 175°C suitable for automotive environments.
- Includes Automotive AEC-Q101 qualification for design assurance.
- Low gate charge (16 nC) minimizes driver losses and improves switching efficiency.
- Compact 5 x 6 mm surface mount DFN package conserves PCB space.
- Dual transistor configuration enhances flexible circuit design.
- Wide maximum gate-source voltage of 20 V supports robust switching.
Product Description
onsemi NVMFD5C466NLWFT1G is a dual N-Channel enhancement mode MOSFET designed for high-performance automotive and industrial applications. It features a continuous drain current of 52 A and a maximum drain-source voltage of 40 V, delivering efficient power handling in a compact surface mount DFN package measuring 5.1 mm width by 6.1 mm length with a low height of 1.05 mm.
This MOSFET provides low drain-source resistance of 12.6 milliohms, which reduces conduction losses and improves system efficiency. With a maximum power dissipation rating of 40 W and an operating temperature range from -55°C to 175°C, it supports demanding thermal conditions typical in automotive systems, including engine controllers and anti-lock braking systems.
The device's low typical gate charge of 16 nC minimizes driver losses, optimizing switching speeds for solenoid drivers and high/low side MOSFET driver circuits. It also features a high maximum gate-source voltage of 20 V and a forward voltage of 0.9 V, ensuring robust switching performance and protection.
onsemi NVMFD5C466NLWFT1G carries the automotive AEC-Q101 standard qualification confirming its suitability for rigorous automotive applications. Its Dual transistor configuration and wettable flank option provide enhanced optical inspection capability, supporting PPAP (Production Part Approval Process) compliance for manufacturing quality assurance.
This MOSFET is ideal for use in automotive engine controllers, anti-lock braking systems, solenoid drivers, and other power management circuits demanding compact size, high performance, and reliability.
Features low Rds(on) of 12.6 milliohms for efficient conduction. Supports a maximum power dissipation of 40 W for reliable operation. Operates from -55°C up to 175°C suitable for automotive environments. Includes Automotive AEC-Q101 qualification for design assurance.
Low gate charge (16 nC) minimizes driver losses and improves switching efficiency. Compact 5 x 6 mm surface mount DFN package conserves PCB space. Dual transistor configuration enhances flexible circuit design. Wide maximum gate-source voltage of 20 V supports robust switching.
Forward voltage of 0.9 V assists in controlling conduction characteristics. Wettable Flank option available for enhanced optical inspection and PPAP capability. Explore more automotive and industrial semiconductor products at EnvMart to meet your specific application needs.
Explore more products in our MOSFET Dual Transistor category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 52 A.
It has a maximum drain-source voltage of 40 V.
This model operates within a temperature range of -55°C to 175°C.
The NVMFD5C466NLWFT1G comes in a compact DFN package measuring 5.1 mm in width, 6.1 mm in length, and 1.05 mm in height.
It features a low Rds(on) value of 12.6 milliohms, which helps in efficient conduction.
The typical gate charge is 16 nC, which minimizes driver losses and enhances switching efficiency.
It complies with the Automotive AEC-Q101 standard, ensuring its suitability for automotive applications.
The maximum power dissipation rating is 40 W, providing reliable operation.
The forward voltage for this model is 0.9 V, which assists in controlling conduction characteristics.
This model has 2 elements per chip, allowing for a dual transistor configuration.
The maximum gate-source voltage supported is 20 V, which ensures robust switching performance.
This MOSFET is suitable for automotive engine controllers, anti-lock braking systems, and solenoid drivers, among other power management circuits.
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