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Infineon Isolated HEXFET Dual Type P and Type N-Channel MOSFET, 6.5 A, 30 V, SOIC 8-Pin Surface Mount IRF7319TRPBF

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Infineon Isolated HEXFET Dual Type P and Type N-Channel MOSFET, 6.5 A, 30 V, SOIC 8-Pin Surface Mount IRF7319TRPBF

Name: Infineon Isolated HEXFET Dual Type P and Type N-Channel MOSFET, 6.5 A, 30 V, SOIC 8-Pin Surface Mount IRF7319TRPBF
Brand: Infineon
SKU: 378826
Price: 0.9 USD
Availability: InStock

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Category MOSFET Dual Transistor Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1.5mm
Length	5mm
Model	IRF7319TRPBF
Width	4mm
Mount Type	Surface
Series	HEXFET
Maximum Operating Temperature	150°C
Package Type	SOIC
Minimum Operating Temperature	-55°C
Pin Count	8
Number of Elements per Chip	2
Channel Type	Type P, Type N
Maximum Continuous Drain Current Id	6.5A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	98mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2W
Typical Gate Charge Qg @ Vgs	22nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-0.78V
Transistor Configuration	Isolated

Key Features

This device features an enhancement mode transistor configuration suitable for space-saving switching designs.
The surface mount SOIC package supports high component density applications.
Maximum power dissipation is 2 W with operating temperatures from -55°C to 150°C.
Gate charge of 22 nC and gate-source voltage range of -20 V to +20 V support efficient driving.
Consists of two elements per chip, integrating dual N/P-channel MOSFETs for compact circuitry.
Forward voltage drop is -0.78 V contributing to low conduction losses.
The device is non-automotive grade and does not have specific standards or approvals.

Product Description

Infineon IRF7319TRPBF is an isolated HEXFET dual MOSFET combining Type P and Type N channels in a compact 8-pin SOIC surface mount package. This device supports a maximum continuous drain current of 6.5 A and a drain-source voltage of 30 V. Designed for enhancement mode transistor operation, it offers a power dissipation rating of 2 W and wide operating temperature range from -55°C to 150°C, making it suitable for robust industrial and electronic applications.

The dual N/P-channel configuration integrates two elements per chip, effectively providing space-saving and cost-effective switching solutions for high density PCB layouts. The typical gate charge of 22 nC at gate-source voltage ensures efficient switching performance, while the wide gate-source voltage tolerance of -20 V to +20 V allows versatile drive conditions. Additionally, the device features a forward voltage drop of -0.78 V to reduce power losses during conduction.

Compact physical dimensions of 1.5 mm height, 5 mm length, and 4 mm width facilitate integration in limited-space electronic components. Although it does not carry automotive standards or specific approvals, the MOSFET supports applications in electronic, industrial, and power management circuits requiring reliable N/P-channel switching devices.

This dual isolated HEXFET MOSFET is optimized for surface mount technology enhancing installation efficiency. Enhancement mode operation supports stable transistor switching performance. Wide operating temperature range enables use in harsh thermal environments.

Small package size supports high component density designs. Suitable for industrial electronics, power supply switching, and discrete semiconductor applications. Explore additional Infineon products and related discrete semiconductors on EnvMart for your electronic component needs.

Explore more products in our MOSFET Dual Transistor category.