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Vishay N-Channel Power MOSFET, 23 A, 400 V Enhancement, 3-Pin TO-247AC IRFP360PBF

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 20.7mm
Length 15.87mm
Model IRFP360PBF
Width 5.31mm
Mount Type Through Hole
Series IRFP360
Maximum Operating Temperature 150°C
Package Type TO-247AC
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 23A
Maximum Drain Source Voltage Vds 400V
Maximum Drain Source Resistance Rds 200mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 280W
Typical Gate Charge Qg @ Vgs 210nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.8V
IRFP360, N-Channel MOSFET Transistor 23A 400V, 3-Pin TO-247ACBrand Vishay

Key Features

  • Offers maximum continuous drain current of 23 amperes for steady load handling.
  • Supports a maximum drain-source voltage of 400 volts for high-voltage applications.
  • Enhanced power dissipation capability of 280 watts ensures robustness under load.
  • Low drain-source resistance of 200 milliohms reduces conduction losses efficiently.
  • Typical gate charge of 210 nanocoulombs balances switching performance and control.
  • Wide operating temperature range from -55°C up to 150°C for harsh environments.
  • Package type TO-247AC enables bolted heatsink attachment and easy PCB soldering.
  • Maximum gate-source voltage tolerance of ±20 volts suitable for standard gate drives.

Product Description

Vishay IRFP360PBF is a high-voltage, N-channel power MOSFET optimized for industrial power electronic circuits requiring reliable, efficient switching performance. The transistor supports continuous drain currents up to 23 A and blocking voltages up to 400 V, making it suitable for demanding switching power supplies, motor drive circuits, inverters, and power management in industrial automation.

The device employs an enhancement-mode channel and features a low on-resistance of 200 milliohms, which minimizes conduction losses and improves thermal performance. Its maximum power dissipation rating of 280 watts allows operation under heavy load conditions with adequate cooling. The TO-247AC package facilitates straightforward through-hole installation and bolted heatsink mounting for effective thermal management.

Designed for harsh industrial environments, the IRFP360PBF operates between -55°C and 150°C ambient temperature, ensuring durability and stability. It tolerates gate-source voltages up to ±20 V, conforming to common MOSFET gate drive standards. The typical gate charge of 210 nC offers a balanced tradeoff between switching speed and gate drive requirements, enhancing efficiency in switching applications.

Common uses include switching power supplies in industrial equipment, motor controllers for high-voltage motors, inverter topologies, and high-power DC-DC converters. The robust construction and through-hole package make it ideal for applications demanding reliable mounting and thermal dissipation.

Maximum continuous drain current: 23 A for steady high-current operation. Voltage blocking capability up to 400 V suited for industrial power electronics. High power dissipation rating of 280 W for heavy-duty performance.

Low on-resistance of 200 mΩ reduces conduction losses and heat generation. Gate threshold and charge optimized for balance of speed and control. Wide ambient operating temperature range supports use in harsh conditions. Through-hole TO-247AC package facilitates mounting and heat sinking.

Gate-source voltage tolerance ±20 V for standard drive circuits.

This Vishay Power MOSFET is an essential component for designers seeking rugged, high-performance switching transistors suitable for diverse industrial and commercial power applications. Explore more Vishay semiconductor products and Power MOSFETs on EnvMart to select the right component for your designs.

Vishay N-Channel Power MOSFET, 23 A, 400 V Enhancement, 3-Pin TO-247AC IRFP360PBF
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Frequently Asked Questions

The maximum continuous drain current of this model is 23 A, allowing for steady high-current operation in various applications.

This MOSFET supports a maximum drain-source voltage of 400 V, making it suitable for high-voltage applications.

It has a maximum power dissipation rating of 280 W, which ensures robust performance under heavy load conditions.

The typical gate charge is 210 nC, providing a balance between switching performance and control requirements.

The operating temperature range for this device is from -55°C to 150°C, allowing it to function in harsh environments.

It comes in a TO-247AC package type, which facilitates bolted heatsink attachment and easy PCB soldering.

The on-resistance is 200 milliohms, which helps to minimize conduction losses and improve thermal performance.

The maximum gate-source voltage tolerance is ±20 V, which is suitable for standard gate drive circuits.

This model has a pin count of 3, which is typical for through-hole mounting applications.

The forward voltage for this device is 1.8 V, which is relevant for its operation in switching applications.

It utilizes an N-channel type, optimized for enhancement-mode operation in power electronic circuits.

This MOSFET complies with RoHS standards, ensuring it meets environmental regulations.

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