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Vishay IRFP N-Channel Power MOSFET 16 A 600 V Enhancement Mode 3-Pin TO-247AC IRFPC60LCPBF

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 20.7mm
Length 15.87mm
Model IRFPC60LCPBF
Width 5.31mm
Mount Type Through Hole
Series IRFP
Maximum Operating Temperature 150°C
Package Type TO-247AC
Minimum Operating Temperature -55°C
Standards/Approvals RoHS 2002/95/EC
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 16A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 0.4Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 280W
Typical Gate Charge Qg @ Vgs 120nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1.8V
N-channel MOSFET,IRFPC60LC 16A 600VBrand Vishay

Key Features

  • Features a TO-247AC 3-pin package suitable for through-hole mounting.
  • Enhancement mode channel type ensures reliable performance.
  • Maximum power dissipation of 280 W supports demanding applications.
  • Typical gate charge of 120 nC for effective gate driving.
  • Wide operating temperature range from -55°C to 150°C enhances durability.
  • Low maximum drain-source resistance of 0.4 Ohms reduces conduction losses.
  • Maximum gate source voltage tolerance of ±30 V allows robust gate control.
  • Complies with RoHS 2002/95/EC environmental standards.

Product Description

Vishay IRFPC60LCPBF is a high-performance N-Channel Power MOSFET designed for efficient power switching and control in industrial electronics and semiconductor applications. This enhancement mode MOSFET features a maximum continuous drain current of 16 A and can tolerate a drain-source voltage of up to 600 V, making it suitable for medium to high voltage circuits.

The device comes in a TO-247AC 3-pin package tailored for through-hole mounting, providing ease of integration onto printed circuit boards. With a maximum power dissipation rating of 280 W, the MOSFET is capable of handling substantial thermal loads, supported by its wide operating temperature range from -55°C to 150°C, ensuring reliability in harsh environments.

The typical gate charge of 120 nC at a gate-source voltage of ±30 V makes this MOSFET responsive and efficient for switching applications, reducing switching losses. It has a low drain-source resistance of 0.4 Ω, contributing to improved conduction efficiency and reduced heat generation.

Physical dimensions including 15.87 mm length, 5.31 mm width, and 20.7 mm height keep the component compact yet robust, ideal for use in power management modules, industrial machinery controls, and electronic power converters.

This component complies with RoHS 2002/95/EC directive, ensuring it meets environmental safety standards. It is not aligned with automotive standards but is highly suitable for industrial control, power conversion, and electronic component manufacturing sectors.

High continuous drain current capability for demanding loads. Reliable operation in a wide temperature range from -55°C to 150°C. Compact TO-247AC package for durability and ease of mounting. Low on-resistance reduces power loss and heating.

RoHS compliant ensuring environmental safety.

This Vishay IRFPC60LCPBF Power MOSFET is an essential component for industrial electronic designs, power supplies, and other applications requiring efficient and reliable power switching devices. Explore more power semiconductor components in the Electronics & Electricals category at EnvMart for comprehensive industrial solutions.

Vishay IRFP N-Channel Power MOSFET 16 A 600 V Enhancement Mode 3-Pin TO-247AC IRFPC60LCPBF
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Frequently Asked Questions

The Vishay IRFPC60LCPBF has a maximum continuous drain current of 16 A.

This MOSFET can tolerate a maximum drain-source voltage of up to 600 V.

It has a maximum power dissipation rating of 280 W, suitable for handling substantial thermal loads.

The typical gate charge is 120 nC at a gate-source voltage of ±30 V, making it efficient for switching applications.

The dimensions of this MOSFET are 15.87 mm in length, 5.31 mm in width, and 20.7 mm in height.

It operates within a wide temperature range from -55°C to 150°C, ensuring reliability in harsh environments.

This MOSFET comes in a TO-247AC 3-pin package designed for through-hole mounting.

The maximum gate-source voltage tolerance is ±30 V, allowing robust gate control.

It has a low maximum drain-source resistance of 0.4 Ω, which helps reduce conduction losses.

Yes, it complies with RoHS 2002/95/EC environmental standards, ensuring safety in usage.

This model features an N-channel enhancement mode, which ensures reliable performance in power switching applications.

It is suitable for industrial control, power conversion, and electronic component manufacturing sectors.

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