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Vishay P-Channel MOSFET TO-220 Package 6.5 A 200 V Enhancement Mode IRF9630PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRF9630PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRF9630 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6.5A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 800mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 74W |
| Typical Gate Charge Qg @ Vgs | 29nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -6.5V |
| P-channel MOSFET,IRF9630 6.5A 200VBrand | Vishay |
Key Features
- The MOSFET provides a maximum continuous drain current of 6.5 A for efficient power handling.
- The maximum drain-source voltage rating is 200 V ensuring robustness in high voltage applications.
- The device uses a TO-220 through-hole package with 3 pins for easy mounting and integration.
- The enhancement mode operation enables fast switching performance with low on-resistance of 800 mΩ.
- Maximum power dissipation capability of 74 W supports demanding industrial and commercial use cases.
- Operating temperature range extends from -55°C to 150°C suitable for harsh environments.
- The MOSFET features typical gate charge of 29 nC at rated gate voltage for optimized switching.
- Maximum gate-source voltage swings between -20 V and +20 V to ensure stable control.
Product Description
The Vishay IRF9630PBF is a P-Channel enhancement mode power MOSFET housed in a TO-220 through-hole package, designed to handle a continuous drain current of 6.5 A and a maximum drain-source voltage of 200 V. This device is engineered to provide fast switching performance with ruggedized design and cost efficiency, making it ideal for industrial and commercial electronics applications.
Featuring a low on-resistance of 800 mΩ and a maximum power dissipation of 74 W, the IRF9630PBF supports demanding power management tasks in circuits such as DC-DC converters, load switch applications, and power supplies.
The MOSFET operates within a wide temperature range from -55°C minimum to 150°C maximum, ensuring reliability in varied environmental conditions. The gate-source voltage rating ranges between -20 V and +20 V, providing stable control of the device with a typical gate charge of 29 nC.
The compact TO-220 package with a 3-pin configuration eases installation and enhances heat dissipation capability. Its dimensions are 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height, accommodating standard PCB layouts and thermal management solutions.
This third-generation power MOSFET series from Vishay is optimized for a combination of speed, ruggedness, and cost-effectiveness. Its dynamic dV/dt capability and simple drive requirements aid in parallel device operation and system design.
The MOSFET supports continuous drain current of 6.5 A. Maximum drain-source voltage up to 200 V ensures operational safety. Low Rds(on) of 800 mΩ minimizes conduction losses. Maximum power dissipation rating of 74 W enables robust thermal handling.
Wide operating temperature range from -55°C to 150°C suits harsh environments. Typical gate charge of 29 nC allows efficient switching. Simple TO-220 through-hole package with 3 pins for ease of use. Designed for industrial, commercial, and power electronics applications.
Environmentally compliant with no specific automotive certifications. The Vishay IRF9630PBF is a trusted component for engineers requiring reliable P-channel MOSFET performance. Explore more electronic components and power semiconductors on EnvMart to find suitable solutions for your industrial and commercial projects.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 6.5 A.
The maximum drain-source voltage rating is 200 V, ensuring robustness in high voltage applications.
It features a low on-resistance of 800 mΩ, which minimizes conduction losses.
The maximum power dissipation capability is 74 W, supporting demanding industrial and commercial use cases.
The operating temperature range extends from -55°C to 150°C, making it suitable for harsh environments.
The typical gate charge at rated gate voltage is 29 nC, which allows for optimized switching performance.
It uses a TO-220 through-hole package with a 3-pin configuration for easy mounting and integration.
The dimensions are 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height.
The maximum gate-source voltage swings between -20 V and +20 V, ensuring stable control of the device.
This model has a P-channel type, operating in enhancement mode.
Yes, it is designed for applications such as DC-DC converters, load switch applications, and power supplies.
The country of origin for this MOSFET is India.
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