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Infineon IPC N-Channel MOSFET, 100 A Continuous Drain Current, 40 V Drain-Source Voltage, 8-Pin SuperSO8 IPC50N04S5L5R5ATMA1

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Infineon IPC N-Channel MOSFET, 100 A Continuous Drain Current, 40 V Drain-Source Voltage, 8-Pin SuperSO8 IPC50N04S5L5R5ATMA1

Name: Infineon IPC N-Channel MOSFET, 100 A Continuous Drain Current, 40 V Drain-Source Voltage, 8-Pin SuperSO8 IPC50N04S5L5R5ATMA1
Brand: Infineon
SKU: 406100
Price: 0.58 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IPC50N04S5L5R5ATMA1
Mount Type	Surface
Series	IPC
Maximum Operating Temperature	175°C
Package Type	SuperSO8 5 x 6
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	100A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	1.4mΩ
Channel Mode	N
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.1V

Key Features

Supports high current surface-mount power switching applications.
Has a low 1.4 mΩ maximum drain-source resistance to reduce conduction losses.
Allows power dissipation up to 81 W for sustained thermal performance.
Typical gate charge of 80 nC facilitates efficient gate driving.
Operates reliably from −55 °C to 175 °C suitable for automotive environments.
Complies with RoHS environmental standards and automotive standard AEC-Q101.
Packaged in compact 5 x 6 mm SuperSO8 surface-mount footprint with 8 pins.
Maximum gate-source voltage is 20 V protecting gate voltage margin.

Product Description

The Infineon IPC50N04S5L5R5ATMA1 is a high-current N-Channel MOSFET designed for demanding surface-mount power switching applications. It features a maximum continuous drain current of 100 A and a maximum drain-source voltage of 40 V. Packaged in an 8-pin SuperSO8 footprint measuring 5 x 6 mm, it is suitable for compact power management assemblies.

Its low maximum drain-source resistance of 1.4 mΩ significantly reduces conduction losses, enabling efficient operation under heavy load. The MOSFET supports power dissipation of up to 81 W, allowing sustained thermal loading in high-power scenarios.

The typical gate charge of 80 nC aids in easing gate-driver requirements, while the maximum gate-source voltage rating of 20 V ensures wide gate-voltage margin and protection. The forward voltage drop of 1.1 V contributes to overall efficiency.

This device operates reliably across a wide temperature range from −55 °C to 175 °C, making it ideal for harsh automotive and industrial environments. It conforms to the RoHS directive for restricted substances and meets the automotive reliability standard AEC-Q101.

Applications include automotive power distribution modules, high-current DC-DC converter stages, electric motor drive half-bridge legs, synchronous rectification in power supplies, and other surface-mounted power-management assemblies requiring robust, high-current MOSFETs.

Supports 100 A continuous drain current with low conduction losses. Compact 8-pin SuperSO8 (5 x 6 mm) surface-mount package. Thermally capable of 81 W power dissipation for demanding loads. Wide operating temperature range from −55 °C to 175 °C for automotive use.

Compliant with RoHS and AEC-Q101 automotive standards. Typical gate charge of 80 nC simplifies gate drive design. Maximum gate-source voltage of 20 V preserves device integrity. Forward voltage of 1.1 V enhances efficiency in power circuits.

This Infineon IPC model is a reliable choice for industrial, automotive, and power electronics applications. Explore more Infineon MOSFETs and related power components at EnvMart for robust semiconductor solutions.