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Nexperia Transistor, Small Signal NPN Bipolar, 100 mA Collector Current, 30 V Collector-Emitter Voltage, 3-Pin BC848B,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 3mm
Model BC848B,215
Width 2.5mm
Mount Type Surface
Series BC848
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
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RS Stock No. 725-8528Brand: NexperiaManufacturers Part No.: BC848B,215
Pin Count 3
Maximum Collector Emitter Voltage Vceo 30V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 30V
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single

Key Features

  • Capable of handling a maximum collector current of 100 mA.
  • Maximum collector-emitter voltage rating of 30 V.
  • Configured as a single NPN transistor suitable for surface mounting.
  • Maximum power dissipation of 250 mW ensures reliable operation within limits.
  • Minimum DC current gain (hFE) of 200 for signal amplification.
  • Wide operating temperature range from -65°C to 150°C.
  • Transistor polarity is NPN, ideal for small signal applications.

Product Description

Nexperia BC848B,215 is a small signal NPN bipolar transistor designed for use in discrete semiconductor applications. It features a maximum collector current (Idc) of 100 mA and a collector-emitter voltage (Vceo) rating of 30 V. The transistor comes in a compact 3-pin SOT-23 surface-mount package, making it suitable for compact electronic designs.

This transistor supports a maximum power dissipation of 250 mW and provides a minimum DC current gain (hFE) of 200, making it reliable for signal amplification tasks. It operates safely across a wide temperature range from -65°C to 150°C, ensuring durability in various environments.

Its small form factor with 3 mm length, 2.5 mm width, and 1.1 mm height allows for efficient PCB layout in electronic circuits. The NPN configuration makes it versatile for switching and amplification in electronic devices.

The device does not carry specific automotive or industry-standard certifications but is compliant with Nexperia quality norms. This transistor finds application in industrial, consumer, and communication electronics where small signal switching or amplification is required.

Maximum collector current of 100 mA. Collector-emitter voltage rating of 30 V. Surface mount package type: SOT-23. Power dissipation up to 250 mW. High DC gain with hFE minimum of 200. Wide operating temperature range from -65°C to 150°C.

Compact 3-pin configuration for efficient PCB mounting.

This transistor is an excellent choice for small signal amplification in various electronic instruments and circuits. Browse more Nexperia Bipolar Transistors on EnvMart for your precise semiconductor needs.

Nexperia Transistor, Small Signal NPN Bipolar, 100 mA Collector Current, 30 V Collector-Emitter Voltage, 3-Pin BC848B,215
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Frequently Asked Questions

The maximum collector current for this model is 100 mA.

This transistor has a collector-emitter voltage rating of 30 V.

It supports a maximum power dissipation of 250 mW.

The minimum DC current gain (hFE) is 200, making it suitable for signal amplification.

It operates safely across a wide temperature range from -65°C to 150°C.

This model comes in a compact 3-pin SOT-23 surface-mount package.

The dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

The transistor is configured as a single NPN type, suitable for various applications.

The maximum emitter-base voltage (VEBO) rating is 5 V.

The maximum collector-base voltage (VCBO) rating is 30 V.

It is suitable for small signal switching or amplification in industrial, consumer, and communication electronics.

The country of origin for this transistor is India.

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