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Infineon N-Channel Power MOSFET 212A 40V, 8-Pin PQFN BSZ018NE2LSATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSZ018NE2LSATMA1 |
| Mount Type | Surface |
| Series | BSZ |
| Maximum Operating Temperature | 175°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 212A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Features a maximum continuous drain current of 212 amperes providing high current capability.
- Maximum drain-source voltage rating is 40 volts, suitable for low voltage power management circuits.
- Utilizes a surface mount PQFN package with 8 pins for compact PCB footprint.
- Low on-resistance of 0.7 milliohms reduces conduction losses and improves efficiency.
- Typical gate charge of 80 nanocoulombs at Vgs ensures fast switching performance.
- Capable of dissipating up to 81 watts of power safely under maximum conditions.
- Operates reliably in temperatures from -55°C to a maximum of 175°C, suitable for industrial environments.
- Maximum gate-source voltage is 20 volts, allowing robust gate drive conditions.
Product Description
Infineon BSZ018NE2LSATMA1 is a high-performance N-Channel Power MOSFET designed for demanding power management applications, especially optimized for buck converter circuits. This MOSFET features a compact 8-Pin PQFN surface mount package, which aids in reducing PCB space and thermal resistance.
With a maximum continuous drain current of 212 A and a drain-source voltage rating of 40 V, this device is well-suited for applications requiring high current handling at low voltages. Its very low on-resistance of 0.7 mΩ minimizes conduction losses, leading to improved efficiency in power circuits.
The typical gate charge of 80 nC at gate-source voltage allows rapid switching, making it ideal for high-frequency operations. The component supports a maximum power dissipation of 81 W, ensuring reliable operation under heavy load conditions.
Operating temperatures range from a low of -55°C to a high of 175°C, enabling usage in harsh industrial and automotive environments. The gate-source voltage maximum rating of 20 V and a forward voltage of 1 V contribute to its robust switching characteristics.
The BSZ series MOSFETs from Infineon are RoHS compliant, ensuring they meet environmental regulations regarding hazardous substances. This product is particularly suitable for industrial, automotive, and commercial power electronics applications.
Maximum continuous drain current of 212 A. Drain-source voltage of 40 V. Surface mount 8-Pin PQFN package. Low on-resistance of 0.7 milliohms. Typical gate charge 80 nC at Vgs. Power dissipation capacity of 81 W. Operating temperature from -55°C to 175°C.
Maximum gate-source voltage of 20 V. Forward voltage of 1 V. Compliant with RoHS environmental standards.
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Frequently Asked Questions
The maximum continuous drain current of this model is 212 amperes.
This MOSFET has a maximum drain-source voltage rating of 40 volts.
It features a low on-resistance of 0.7 milliohms, which helps reduce conduction losses.
The typical gate charge at gate-source voltage is 80 nanocoulombs.
This model can safely dissipate up to 81 watts of power under maximum conditions.
It operates reliably in temperatures ranging from -55°C to 175°C.
It utilizes a surface mount PQFN package with 8 pins, which is compact for PCB design.
The maximum gate-source voltage is rated at 20 volts.
This product is RoHS compliant, meeting environmental regulations regarding hazardous substances.
It is particularly suitable for industrial, automotive, and commercial power electronics applications.
The forward voltage for this model is 1 volt.
This model belongs to the BSZ series of power MOSFETs from Infineon.
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