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Vishay TrenchFET Gen IV Type P-Channel MOSFET 30 V, 445 A, Enhancement Mode, 4-Pin PowerPAK (8x8L) SQJQ130EL-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.6mm |
| Length | 6.15mm |
| Model | SQJQ130EL-T1_GE3 |
| Width | 4.9mm |
| Mount Type | Surface |
| Series | TrenchFET Gen IV |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK (8x8L) |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101 |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 445A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.00052Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 255W |
| Typical Gate Charge Qg @ Vgs | 43nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Provides high current capacity up to 445 A for demanding applications.
- Operates efficiently at a maximum drain-source voltage of 30 V.
- Features low drain-source resistance of 0.00052 ohms to reduce power loss.
- Designed for automotive and industrial use with AEC-Q101 qualification.
- Supports high power dissipation up to 255 W with reliable surface mount design.
- Operates over a wide temperature range from -55°C to 125°C maximum.
- Compact dimensions with length 6.15 mm, width 4.9 mm, and height 1.6 mm.
- Enhancement mode device with typical gate charge of 43 nC at Vgs.
Product Description
Vishay SQJQ130EL-T1_GE3 is a high-performance TrenchFET Gen IV type P-Channel MOSFET designed for automotive and industrial applications requiring high current handling and durable operation. With a maximum continuous drain current of 445 A and a drain-source voltage rating of 30 V, this enhancement mode MOSFET excels in power-sensitive and thermal critical environments.
The device is packaged in a low-profile 4-pin PowerPAK (8x8L) surface mount format measuring 6.15 mm in length, 4.9 mm in width, and 1.6 mm in height, facilitating efficient PCB layout and heat dissipation. Its low on-resistance (0.00052 ohms) minimizes conduction losses, enabling higher system efficiency and longer device life.
Rated for maximum power dissipation of 255 W and qualified to AEC-Q101 automotive standard, the MOSFET supports operation at temperatures ranging from -55°C to 125°C, making it suitable for harsh operating conditions encountered in automotive, industrial manufacturing, HVAC systems, power management circuits, and battery management systems.
Additional electrical characteristics include a typical gate charge of 43 nC at gate-source voltage and a forward voltage drop of 1.1 V, providing balanced switching and conduction performance. The robust PowerPAK package also supports effective thermal management, enhancing reliability in high power density designs.
This MOSFET is optimized for surface mount assembly in automated production lines, improving manufacturing efficiency. It supports a wide array of applications including automotive electronic control units, industrial power converters, and other environments requiring reliable P-channel MOSFETs with high current and low voltage operation.
High current rating up to 445 A supports demanding power loads. Low Rds(on) reduces heat generation and energy loss. Automotive-grade AEC-Q101 qualification ensures quality and reliability. Compact PowerPAK surface mount package ideal for dense PCB layouts.
Wide operating temperature range from -55°C to 125°C. Explore more power semiconductor devices for industrial and automotive applications in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 445 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
It features a low drain-source resistance of 0.00052 ohms, which helps reduce power loss.
The dimensions of the PowerPAK package are 6.15 mm in length, 4.9 mm in width, and 1.6 mm in height.
The typical gate charge at gate-source voltage is 43 nC.
It supports a maximum power dissipation of 255 W.
The operating temperature range is from -55°C to 125°C.
Yes, this model is qualified to the AEC-Q101 automotive standard.
This device is designed for surface mount assembly.
The forward voltage drop is 1.1 V.
This model has a pin count of 4.
It is suitable for automotive electronic control units, industrial power converters, and other environments requiring reliable P-channel MOSFETs with high current and low voltage operation.
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