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Vishay N-Channel Depletion Mode MOSFET 410 A, 30 V, 255 W, 4-Pin PowerPAK SO-8L SQJ140ELP-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SQJ140ELP-T1_GE3 |
| Width | 4.9mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK SO-8L |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 410A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.00287Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 255W |
| Typical Gate Charge Qg @ Vgs | 43nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Designed for high power density applications requiring substantial current carrying capability.
- Surface mount 4-pin PowerPAK SO-8L package provides easy PCB assembly.
- Maximum power dissipation of 255 W supports robust performance.
- Low Rds(on) minimizes power losses during conduction.
- Fast switching enabled by typical gate charge of 43 nC.
- Automotive-grade qualification AEC-Q101 ensures operational reliability.
- Wide operating temperature range from -55°C to 125°C.
- Suitable for industrial, automotive, and power management applications requiring depletion mode MOSFETs.
Product Description
The Vishay SQJ140ELP-T1_GE3 N-Channel Depletion Mode MOSFET features a robust design supporting up to 410 A of continuous drain current and a maximum drain-source voltage of 30 V. Its surface-mount 4-pin PowerPAK SO-8L package offers compact and reliable PCB integration. With a maximum power dissipation rating of 255 W, this device is suitable for demanding industrial and automotive electronic applications that require high power density and thermal endurance.
This MOSFET exhibits a low maximum drain-source resistance (Rds) of 0.00287 Ω, significantly reducing conduction losses and improving overall efficiency in power management circuits. The typical gate charge of 43 nC at rated gate voltage ensures rapid switching performance, making it ideal for high-speed electronics.
Engineered to operate within a wide temperature range of -55°C to 125°C, it complies with the automotive AEC-Q101 qualification, assuring reliability and durability under harsh conditions. The forward voltage drop of 1.1 V sustains efficient current flow during operation.
The depletion channel mode enables unique circuit configurations and control schemes, adding versatility in power electronics and automotive designs.
This device is a dependable solution for industrial, automotive, and power electronics manufacturers seeking high current capacity with dependable performance. Its trusted Vishay brand pedigree guarantees quality manufacturing standards.
Designed for high power density applications requiring substantial current carrying capability. Surface mount 4-pin PowerPAK SO-8L package provides easy PCB assembly. Maximum power dissipation of 255 W supports robust performance.
Low Rds(on) minimizes power losses during conduction. Fast switching enabled by typical gate charge of 43 nC. Automotive-grade qualification AEC-Q101 ensures operational reliability. Wide operating temperature range from -55°C to 125°C.
Suitable for industrial, automotive, and power management applications requiring depletion mode MOSFETs. Explore more Vishay semiconductor devices at EnvMart to support your electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 410 A.
The maximum drain-source voltage is 30 V.
It has a maximum power dissipation rating of 255 W.
The typical gate charge is 43 nC.
The maximum drain-source resistance (Rds(on)) is 0.00287 Ω.
The dimensions are 6.15 mm in length and 4.9 mm in width.
The operating temperature range is from -55°C to 125°C.
It complies with the automotive standard AEC-Q101.
This model uses surface mount technology.
It is suitable for industrial, automotive, and power management applications requiring depletion mode MOSFETs.
The forward voltage drop is 1.1 V.
The package has 4 pins.
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