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Infineon SIPMOS® N-Channel Depletion Mode MOSFET, 21 mA Continuous Drain Current, 600 V Drain-Source Voltage BSS126IXTSA1

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Infineon SIPMOS® N-Channel Depletion Mode MOSFET, 21 mA Continuous Drain Current, 600 V Drain-Source Voltage BSS126IXTSA1

Name: Infineon SIPMOS® N-Channel Depletion Mode MOSFET, 21 mA Continuous Drain Current, 600 V Drain-Source Voltage BSS126IXTSA1
Brand: Infineon
SKU: 404528
Price: 0.08 USD
Availability: InStock

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Category MOSFETs Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1.1mm
Length	3mm
Model	BSS126IXTSA1
Width	1.4mm
Mount Type	Surface
Series	SIPMOS®
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	21mA
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	700Ω
Channel Mode	Depletion
Maximum Power Dissipation Pd	0.5W
Typical Gate Charge Qg @ Vgs	1.4nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

Operates in depletion mode for normally-on behavior and simplified gate control.
Maximum drain-source resistance of 700 ohms limits on-state conduction.
Maximum power dissipation of 0.5 W supports low-power thermal budgets.
Typical gate charge of 1.4 nC enables modest gate-drive energy requirement.
Wide operating temperature range from -55°C to 150°C suitable for varied environments.
Compact 3-pin SOT-23 surface mount package ensures ease of PCB assembly.
Suitable for low-current protection circuits, bleeder resistors, and sensor front-ends.
Maximum gate-source voltage rating of 20 V allows safe gate operation.

Product Description

Infineon BSS126IXTSA1 is a SIPMOS® series N-Channel depletion-mode MOSFET designed for surface-mounted electronics requiring high-voltage switching in a compact footprint. It features a maximum drain-source voltage of 600 V and a maximum continuous drain current of 21 mA, making it well-suited for low-power circuits requiring normally-on device behavior for simplified gate control.

This MOSFET has a maximum drain-source resistance of 700 ohms to limit on-state conduction losses and a forward voltage of 1.2 V to reduce voltage drop in driven paths. Its typical gate charge is 1.4 nC, allowing modest gate-drive energy and supporting efficient switching.

Thermally, the device supports a maximum power dissipation of 0.5 W and operates reliably within a temperature range from -55°C to 150°C. The compact SOT-23 package (3 mm length, 1.4 mm width, and 1.1 mm height) is optimized for automated PCB assembly and land-pattern planning.

Applications include high-voltage biasing networks in analogue designs, low-current protection circuits, bleeder resistors, current steering in sensor front-ends, and compact power-management subcircuits within converters. The device is not rated for automotive-grade classifications.

Operates normally on due to depletion mode enabling simplified gate drive. Small-signal device ideal for analog and power management circuits. Compact surface-mount SOT-23 package for efficient PCB space utilization. Wide temperature tolerance for industrial and environmental versatility.

High-voltage switching capability with 600 V drain-source voltage. Low maximum continuous drain current of 21 mA for low-power applications. Safe maximum gate-source voltage rating of 20 V ensures reliable operation.

This Infineon SIPMOS® MOSFET complements a wide range of industrial, electronics, and manufacturing applications requiring robust, high-voltage capable, low-power transistor components in a compact package.

Explore more Infineon discrete semiconductors and MOSFET products within EnvMart’s Electronics & Electricals catalog for high-quality components tailored to demanding industrial requirements.

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