Toshiba N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-23 Surface Mount T2N7002AK,LM(T)

Toshiba T2N7002AK,LM(T is an N-Channel MOSFET semiconductor device engineered for high-speed switching applications in electronic and power circuits. This transistor utilizes silicon material with high-performance characteristics to provide reliable, efficient operation in compact spaces.

The device supports a maximum continuous drain current of 200 mA and a maximum drain source voltage of 60 V, rendering it suitable for low to moderate power switching tasks. Its surface mount package type SOT-23 with 3 pins allows easy integration on printed circuit boards with minimal space consumption.

Equipped with a maximum drain-source resistance (Rds) of 3.2 milliohms and a typical gate charge of 0.27 nanocoulombs, this MOSFET offers low conduction and switching losses, enhancing overall energy efficiency in circuits.

The transistor operates reliably within an extended temperature range from -55°C to 150°C, making it viable for industrial, commercial, and automotive electronics environments that demand thermal resilience.

Additional specifications include a forward voltage (Vf) of -0.87 V and a maximum gate-to-source voltage (Vgs) rating of 20 V, ensuring device protection and safe operation under various loads.

Physical dimensions of length 2.4 mm, width 2.9 mm, and height 0.8 mm facilitate utilization in compact designs where size constraints exist. Compact 3-pin SOT-23 surface mount package for space-efficient installation. Maximum continuous drain current of 200 mA for low power applications.

High maximum drain source voltage of 60 V for robust switching. Low maximum drain-source resistance of 3.2 milliohms helps reduce losses. Wide operating temperature range from -55°C to 150°C ensures durability. Typical gate charge of 0.27 nC optimizes switching speed and efficiency.

Maximum power dissipation of 1 watt for thermal management. Forward voltage of -0.87 V suits electronic circuit needs. Maximum gate-source voltage of 20 V prevents gate damage. Small physical dimensions ideal for compact electronics.

This Toshiba MOSFET T2N7002AK,LM(T is ideal for applications in industrial, commercial electronics, consumer devices, embedded systems, and automotive electronics where efficient and reliable switching components are required.

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