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Vishay N-Channel 30 V N-Channel MOSFET 437 A, 30 V, 4-Pin PowerPAK (8x8L) SQJ128ELP-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.1mm |
| Length | 6.25mm |
| Model | SQJ128ELP-T1_GE3 |
| Width | 5mm |
| Mount Type | Surface |
| Series | N-Channel 30 V |
| Maximum Operating Temperature | 175°C |
| Package Type | PowerPAK (8x8L) |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 437A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 2mΩ |
| Maximum Power Dissipation Pd | 500W |
| Typical Gate Charge Qg @ Vgs | 99nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Operates at a maximum continuous drain current of 437 A.
- Maximum drain-source voltage of 30 V supports robust power handling.
- Features a 4-pin PowerPAK (8x8L) package for surface mount applications.
- Has an extremely low maximum drain-source resistance of 2 milliohms for efficiency.
- Can dissipate up to 500 W power, suitable for high-power devices.
- Supports an operating temperature range from -55°C to 175°C for reliability.
- Typical gate charge of 99 nC at gate-source voltage ensures fast switching.
- Includes AEC-Q101 automotive standard qualification for automotive use cases.
Product Description
Vishay SQJ128ELP-T1_GE3 is a high-performance N-Channel MOSFET specifically engineered for demanding power applications. Rated at 30 V and capable of continuous drain currents up to 437 A, this device provides efficient power switching with exceptionally low on-resistance of 2 milliohms, ensuring minimal energy loss and thermal build-up.
Encapsulated in a compact 4-pin PowerPAK (8x8L) surface mount package, it suits space-constrained industrial and automotive electronics designs. The MOSFET supports a wide operating temperature range from -55°C to 175°C, making it reliable for harsh environments.
This product is AEC-Q101 qualified, underscoring its suitability for automotive applications where high reliability and robust performance are critical. Its maximum power dissipation rating of 500 W enables it to handle significant power loads without failure.
The typical gate charge of 99 nC at the rated gate-source voltage facilitates fast switching speeds, improving system efficiency in high frequency switching circuits. Compact physical dimensions (1.1 mm height, 6.25 mm length, and 5 mm width) enable versatile PCB layouts.
Forward voltage of 1.1 V aids in reducing power losses in conduction mode. Its surface mount technology mounting type emphasizes ease of assembly for mass production environments.
This MOSFET is ideal for industrial, automotive, and power management applications including DC-DC converters, motor drives, and load switching. It offers a balance of power, efficiency, and thermal performance necessary for modern electronics.
Operates at a maximum continuous drain current of 437 A. Maximum drain-source voltage of 30 V. 4-pin PowerPAK (8x8L) package type. Maximum drain-source resistance of 2 milliohms. Maximum power dissipation of 500 W. Operating temperature range of -55°C to 175°C.
Typical gate charge of 99 nC at Vgs. AEC-Q101 automotive standard qualified. Dimensions: Height 1.1 mm, Length 6.25 mm, Width 5 mm. Forward voltage of 1.1 V. Explore more Vishay high-quality discrete semiconductors and power devices on EnvMart for industrial and automotive solutions.
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Frequently Asked Questions
The maximum continuous drain current of this model is 437 A.
It supports a maximum drain-source voltage of 30 V.
This MOSFET is encapsulated in a 4-pin PowerPAK (8x8L) package.
It has a maximum power dissipation rating of 500 W.
The maximum drain-source resistance is 2 milliohms.
The operating temperature range is from -55°C to 175°C.
The typical gate charge is 99 nC at the rated gate-source voltage.
It has a height of 1.1 mm, length of 6.25 mm, and width of 5 mm.
Yes, it includes AEC-Q101 automotive standard qualification.
The forward voltage is 1.1 V.
This unit uses surface mount technology for installation.
It is suitable for applications such as DC-DC converters, motor drives, and load switching.
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