$0.48
$0.47
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay TrenchFET Gen IV Type P-Channel MOSFET, 18.3 A, 30 V Enhancement, 8-Pin SO-8 Si4425FDY-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | Si4425FDY-T1-GE3 |
| Mount Type | Surface |
| Series | TrenchFET Gen IV |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 18.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 16mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 4.8W |
| Typical Gate Charge Qg @ Vgs | 41nC |
| Maximum Gate Source Voltage Vgs | 16V |
Key Features
- This MOSFET features an enhancement mode channel for improved power control.
- It comes in an 8-pin SO-8 surface mount package suitable for compact PCB designs.
- The device offers a low maximum drain-source resistance of 16 mΩ for efficient power usage.
- Maximum power dissipation is rated at 4.8 W, supporting high-performance applications.
- Operating temperature ranges from -55°C to 150°C, suitable for industrial environments.
- Maximum gate-source voltage rating is 16 V, providing safe control limits.
- Typical gate charge is 41 nC at specified gate voltages for fast switching.
- This MOSFET is part of the TrenchFET Gen IV series known for enhanced reliability and efficiency.
Product Description
The Vishay Si4425FDY-T1-GE3 is a TrenchFET Gen IV type P-channel MOSFET designed for high efficiency and reliable power management applications. It supports a maximum continuous drain current of 18.3 A and a maximum drain-source voltage of 30 V, making it suitable for various semiconductor and electronic power circuits.
This MOSFET is packaged in a compact 8-pin SO-8 surface mount device, enabling integration into dense PCB layouts for industrial and commercial electronics. Its enhancement mode channel enables effective switching characteristics and power control.
The Si4425FDY-T1-GE3 device features a low maximum drain-source resistance (Rds) of 16 milliohms, allowing minimal conduction losses and improved thermal performance. It can dissipate up to 4.8 watts of power and operates reliably in temperature ranges from -55°C to 150°C, supporting demanding operating environments.
The maximum gate-source voltage rating of 16 V provides design flexibility for gate driving circuitry. The typical gate charge of 41 nC at rated gate voltages facilitates fast switching speeds for efficient power conversion.
This MOSFET suits applications in power management, industrial electronics, automotive electronics, and consumer devices. The TrenchFET Gen IV series incorporates advanced design features for reduced on-resistance and improved switching performance.
Its surface mounting design in SO-8 package supports automated assembly processes. Operating temperature range and power dissipation make it appropriate for a wide range of environmental conditions. Vishay's quality manufacturing ensures consistent performance and reliability across production batches.
For engineers and designers, the Si4425FDY-T1-GE3 offers a high-performance, reliable solution for P-channel MOSFET needs in electronic circuit designs. Browse EnvMart for more Vishay semiconductor products and related electronic components to support your project requirements.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for the Vishay Si4425FDY-T1-GE3 is 18.3 A.
This model has a maximum drain-source voltage rating of 30 V.
The maximum power dissipation for this MOSFET is rated at 4.8 W.
It operates within a temperature range of -55°C to 150°C.
The maximum gate-source voltage rating is 16 V.
This MOSFET comes in an 8-pin SO-8 surface mount package.
The typical gate charge is 41 nC at the specified gate voltages.
The maximum drain-source resistance is 16 mΩ.
It features an enhancement mode channel, which allows for effective switching characteristics.
The specific dimensions of the SO-8 package are not provided, but it is designed for compact PCB layouts.
This MOSFET is suitable for power management, industrial electronics, automotive electronics, and consumer devices.
The country of origin for the Vishay Si4425FDY-T1-GE3 is India.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$1.64
$1.59
-3%
New
Recently Viewed Products
$0.48
$0.47
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent