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Vishay SiSS05DN Type P-Channel MOSFET 108 A 30 V Enhancement Mode 8-Pin PowerPAK 1212 SiSS05DN-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 780μm |
| Length | 3.3mm |
| Model | SiSS05DN-T1-GE3 |
| Width | 3.3mm |
| Mount Type | Surface |
| Series | SiSS05DN |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 108A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 5.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 65.7W |
| Typical Gate Charge Qg @ Vgs | 76nC |
| Maximum Gate Source Voltage Vgs | -20, +16V |
| Forward Voltage Vf | -1.1V |
Key Features
- The device is an enhancement mode TrenchFET Gen IV p-channel power MOSFET.
- It features exceptionally low RDS(on) of 5.8 mΩ for efficient performance.
- Maximum power dissipation is 65.7 W supporting high power density applications.
- Operating temperature ranges from -55°C to 150°C ensuring reliability in harsh environments.
- Maximum gate source voltage rating is -20 V to +16 V providing robust gate control.
- Typical gate charge is 76 nC at Vgs, enabling fast switching.
- Compact PowerPAK 1212 surface-mount package with dimensions 3.3 mm × 3.3 mm × 0.78 mm.
- Designed for use in industrial, automotive, and power management circuits.
Product Description
Vishay SiSS05DN-T1-GE3 is a high-performance Type P-Channel MOSFET designed for efficient power switching with a continuous drain current capacity of 108 A and a maximum drain source voltage of 30 V. The enhancement mode TrenchFET Gen IV technology ensures extremely low RDS(on) resistance, optimizing power efficiency and thermal performance in a compact 8-pin PowerPAK 1212 surface-mount package.
This MOSFET supports a maximum power dissipation of 65.7 W and operates reliably over a wide temperature range from -55°C to 150°C, making it suitable for demanding industrial and automotive electronics applications. The device features a maximum gate source voltage rating between -20 V and +16 V, with a typical gate charge of 76 nC at Vgs, enabling rapid switching responses critical for power management and control.
The small form factor package dimensions (3.3 mm length, 3.3 mm width, 780 μm height) facilitate compact PCB layouts while providing enhanced thermal dissipation. This product is ideal for use in power converters, motor drives, and other semiconductor switching applications requiring robust, efficient, and thermally enhanced MOSFET solutions.
The device is an enhancement mode TrenchFET Gen IV p-channel power MOSFET. It features an exceptionally low RDS(on) of 5.8 mΩ in a compact PowerPAK 1212 package. Supports a continuous drain current of 108 A and a maximum drain source voltage of 30 V.
Maximum power dissipation is rated at 65.7 W for high power applications. Wide operating temperature range from -55°C to 150°C ensures durability. Maximum gate source voltage range of -20 V to +16 V offers robust gate control.
Compact surface-mount 8-pin package measuring 3.3 mm by 3.3 mm by 780 μm.
Applications for Vishay's SiSS05DN-T1-GE3 include power management in industrial machinery, automotive systems, and other high-efficiency electronic switching circuits. The device combines compact size with high power capability and thermal performance, contributing to effective design solutions within semiconductor power devices.
Explore more industrial semiconductors and power MOSFET devices on EnvMart for advanced applications and engineering solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 108 A.
The maximum drain source voltage rating is 30 V.
It features an exceptionally low RDS(on) of 5.8 mΩ.
The typical gate charge at Vgs is 76 nC.
The dimensions of the PowerPAK 1212 package are 3.3 mm in length, 3.3 mm in width, and 780 μm in height.
The operating temperature range is from -55°C to 150°C.
The maximum power dissipation is rated at 65.7 W.
The maximum gate source voltage rating is between -20 V and +16 V.
This model uses surface mounting.
It is suitable for power management in industrial machinery, automotive systems, and high-efficiency electronic switching circuits.
The channel type is P-Channel.
This model belongs to the SiSS05DN series.
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