Vishay N-Channel MOSFET 3.5 A Continuous Drain Current 8 V Drain-Source Voltage 4-Pin MICRO FOOT Surface Mount SI8802DB-T2-E1

Vishay SI8802DB-T2-E1 is a high-quality N-channel enhancement MOSFET engineered for low-voltage switching and power management applications. This device features a maximum continuous drain current of 3.5 A and a maximum drain-source voltage of 8 V, making it suitable for compact surface-mount assemblies. It supports a wide operating temperature range from -55°C up to 150°C, ensuring reliable performance across harsh environments.

The device is supplied in a compact 4-pin MICRO FOOT package designed for surface mount technology, ideal for high-density PCBs and applications with limited space. The device offers a low on-resistance of 54mΩ which minimizes conduction losses and heat generation, while a typical gate charge of 4.3nC allows fast switching transitions, enhancing efficiency in motor-driver stages or power management modules.

Its maximum power dissipation rating is 0.6W, necessitating appropriate thermal design such as copper areas or thermal vias to control device temperature. The MOSFET operates in enhancement mode and has a forward voltage of 1.2V, suitable for battery-powered DC power switching and load switching in dense assemblies.

The MOSFET complies with RoHS standards, affirming its environmental safety. This device is well suited for industrial, commercial, laboratory, and consumer electronics applications involving power management, motor controls, and portable device power-rail switching.

Operates at 8 V drain-source voltage for low voltage power stages. Supports continuous drain current of 3.5 A for moderate loads. Low on-resistance of 54mΩ reduces conduction losses and heat. Typical gate charge 4.3nC enables fast switching transition.

Maximum power dissipation rated at 0.6W limits thermal stress. Wide temperature range from -55°C to 150°C for reliable operation. Compact 4-pin MICRO FOOT surface-mount package, ideal for dense PCB layouts. Enhancement mode channel for controlled switching.

Forward voltage of 1.2V ensures efficient operation. RoHS compliant for environmental safety.

This product is ideal for electronic designs requiring compact MOSFETs for power switching, motor driver circuits, and power management modules where space and thermal performance are critical. Engineers seeking reliable low voltage MOSFETs will find the SI8802DB-T2-E1 a precise choice.

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