Vishay Single E 1 N-Channel Power MOSFET, 26 A Continuous Drain Current, 500 V Drain Source Voltage, 3-Pin SIHP25N50E-GE3

Vishay SIHP25N50E-GE3 is a Single E 1 N-Channel Power MOSFET designed for industrial and electronic power applications requiring robust high voltage switching and conversion. With a maximum continuous drain current of 26 A and a drain-source voltage rating of 500 V, this transistor is suitable for demanding power supply, motor drive, and inverter circuits.

The device features a 3-pin TO-220AB package which allows effective heat transfer when mounted on heatsinks, supporting a maximum power dissipation of 250 W under ideal thermal conditions. Its low drain-source resistance of 0.145 Ω minimizes conduction losses and enhances efficiency in power stages.

The typical gate charge of 86 nC facilitates efficient switching performance, while the maximum gate-source voltage of 30 V safeguards the gate from over-voltage damage. Operating reliably from -55°C to 150°C, the MOSFET suits applications exposed to extreme temperature environments.

Applications include industrial power supplies, inverters, motor controls, high voltage relay switching, and use in discrete power stages within high temperature scenarios. The single transistor configuration and robust package make integration straightforward for power electronics engineers.

26 A continuous drain current rating. 500 V maximum drain-source voltage. 250 W maximum power dissipation. Low 0.145 Ω Rds(on) for efficiency. Typical 86 nC gate charge for switching. Operating temperature from -55°C up to 150°C.

TO-220AB package for thermal management. Single transistor configuration. RoHS compliant product.

Vishay Power MOSFETs are trusted for high-reliability industrial and electronic applications. Explore related products on EnvMart and find matched components for your power electronics projects.