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Toshiba N-Channel MOSFET, 100 mA, 30 V Enhancement Mode, 3-Pin SC-75 Package SSM3K15AFS,LF(T

Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin Japan
Brand Toshiba
Height 700μm
Length 1.6mm
Model SSM3K15AFS,LF(T
Width 800μm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SC-75
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 100mA
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 6Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 100mW
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf -1.2V

Key Features

  • This MOSFET operates in enhancement mode for efficient switching.
  • It features a compact 3-pin SC-75 package ideal for space-saving PCB layouts.
  • The device supports a maximum gate-source voltage of 20 V.
  • Operates reliably across a wide temperature range from -55°C to 150°C.
  • Maximum drain-source resistance (Rds) is 6 ohms ensuring low power loss.
  • Forward voltage drop of -1.2 V enables efficient operation.
  • Maximum power dissipation is rated at 100 mW.
  • Manufactured in Japan, ensuring high quality and reliability.

Product Description

The Toshiba SSM3K15AFS,LF(T is a high-quality N-Channel MOSFET transistor designed for use in various electronic and power semiconductor applications. Featuring a maximum continuous drain current of 100 mA and a drain-source voltage of 30 V, this device is ideal for efficient switching and amplification tasks within compact electronic circuits. Its enhancement mode channel allows for low conduction losses and effective control.

Packaged in a compact 3-pin SC-75 surface mount unit, it is suitable for modern PCB designs requiring space optimization without sacrificing performance. The device supports a maximum gate-source voltage of 20 V, providing robustness in different electronic environments.

Engineered for durability, this transistor can operate between -55°C and 150°C, making it suitable for diverse and demanding industrial, automotive, and consumer electronics applications. The maximum drain-source resistance (Rds) of 6 ohms helps minimize energy waste, contributing to overall system efficiency.

The forward voltage drop of -1.2 V ensures low voltage loss during operation, and the power dissipation limit of 100 mW signifies this MOSFET's reliability in handling small power loads.

Manufactured in Japan, the Toshiba SSM3K15AFS,LF(T assures consistent quality and compliance with demanding engineering standards. Its applications span across industrial electronics, semiconductor devices, and power management systems.

This MOSFET operates in enhancement mode for efficient switching. It features a compact 3-pin SC-75 package ideal for space-saving PCB layouts. The device supports a maximum gate-source voltage of 20 V. Operates reliably across a wide temperature range from -55°C to 150°C.

Maximum drain-source resistance (Rds) is 6 ohms ensuring low power loss. Forward voltage drop of -1.2 V enables efficient operation. Maximum power dissipation is rated at 100 mW. Manufactured in Japan, ensuring high quality and reliability.

EnvMart catalog offers this product to engineers and designers who demand precision and reliability in their semiconductor components.

Toshiba N-Channel MOSFET, 100 mA, 30 V Enhancement Mode, 3-Pin SC-75 Package SSM3K15AFS,LF(T
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Frequently Asked Questions

The maximum continuous drain current for this model is 100 mA.

It can handle a maximum drain-source voltage of 30 V.

This MOSFET is packaged in a compact SC-75 surface mount unit.

It operates reliably across a wide temperature range from -55°C to 150°C.

The maximum gate-source voltage supported by this device is 20 V.

The maximum drain-source resistance (Rds) is 6 ohms, which helps minimize energy loss.

The forward voltage drop is -1.2 V, enabling efficient operation.

The maximum power dissipation rating is 100 mW.

The dimensions are 1.6 mm in length, 800 μm in width, and 700 μm in height.

This model utilizes an N-channel for its operation.

It is suitable for various electronic and power semiconductor applications, including industrial, automotive, and consumer electronics.

This device is manufactured in Japan, ensuring high quality and reliability.

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