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Toshiba DTMOSIV N-Channel MOSFET, 11.1 A, 650 V Enhancement Mode, 3-Pin TO-252 TK11P65W,RQ(S

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Toshiba DTMOSIV N-Channel MOSFET, 11.1 A, 650 V Enhancement Mode, 3-Pin TO-252 TK11P65W,RQ(S

Name: Toshiba DTMOSIV N-Channel MOSFET, 11.1 A, 650 V Enhancement Mode, 3-Pin TO-252 TK11P65W,RQ(S
Brand: Toshiba
SKU: 397748
Price: 20.22 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	Japan
Brand	Toshiba
Height	2.3mm
Length	6.6mm
Model	TK11P65W,RQ(S
Width	6.1mm
Mount Type	Surface
Series	DTMOSIV
Maximum Operating Temperature	150°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	11.1A
Maximum Drain Source Voltage Vds	650V
Maximum Drain Source Resistance Rds	440mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	100W
Typical Gate Charge Qg @ Vgs	25nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	1.7V

Key Features

This MOSFET features a low maximum drain-source resistance of 440 mΩ.
It supports a maximum power dissipation of 100 W, suitable for demanding applications.
The device operates between -55°C and 150°C temperature range, ensuring reliability.
Maximum gate-source voltage ranges from -30 V to +30 V for flexible control.
Typical gate charge at Vgs is 25 nC for efficient switching performance.
Forward voltage drop is 1.7 V, minimizing power loss.
Its surface mount TO-252 package measures 6.6 mm length, 6.1 mm width, and 2.3 mm height.
Manufactured in Japan with no specific automotive certification.

Product Description

Toshiba TK11P65W,RQ(S) is a high-performance DTMOSIV N-Channel Enhancement Mode MOSFET designed for power switching and amplification applications. It supports a continuous drain current of 11.1 A and can withstand drain-source voltages up to 650 V.

The device features a TO-252 surface-mount package providing compact and efficient mounting options. It offers a low maximum drain-source resistance of 440 mΩ which helps reduce conduction losses in power circuits, enhancing overall efficiency.

The MOSFET operates reliably across a broad temperature range from -55°C to 150°C, making it suitable for industrial, power electronics, and consumer electronics applications.

With a maximum power dissipation rating of 100 W, it can manage substantial power loads. Its typical gate charge of 25 nC at the gate-source voltage facilitates fast switching speeds, contributing to lower switching losses.

The device’s maximum gate-source voltage range from -30 V to +30 V provides robust control input conditions. Forward voltage drop of 1.7 V ensures minimized power losses during conduction.

This component is made in Japan, ensuring quality manufacturing standards, though it does not carry specific standards or automotive certifications. Low maximum drain-source resistance for enhanced efficiency. Wide operating temperature range from -55°C to 150°C.

High power dissipation capability suitable for demanding circuits. Compact and standard TO-252 surface mount package. Applications include industrial power electronics, manufacturing equipment, and consumer devices. Explore the Electronics & Electricals category at EnvMart for a wide range of discrete semiconductor components, including MOSFETs from leading manufacturers like Toshiba.