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Toshiba DTMOSIV N-Channel MOSFET, 5.8 A, 650 V Enhancement Mode, Surface Mount, 3-Pin TO-252 TK6P65W,RQ(S
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 2.3mm |
| Length | 6.6mm |
| Model | TK6P65W,RQ(S |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | DTMOSIV |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.8A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 1.05Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 60W |
| Typical Gate Charge Qg @ Vgs | 11nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.7V |
Key Features
- This MOSFET operates in enhancement mode for efficient switching.
- Surface mount design with 3 pins for easy PCB integration.
- Maximum continuous drain current of 5.8 amperes ensures reliable performance.
- The device has a maximum drain-source voltage of 650 volts for high voltage applications.
- Low on-resistance of 1.05 ohms reduces conduction losses.
- Typical gate charge is 11 nanocoulombs for fast switching speed.
- Operates safely from -55°C up to 150°C maximum temperature.
- Compact dimensions with length 6.6 mm, width 6.1 mm, and height 2.3 mm.
Product Description
Toshiba TK6P65W,RQ(S is a high-performance N-Channel DTMOSIV MOSFET designed for power switching and amplification in electronic circuits. It features an enhancement mode channel, suitable for efficient control in power management and switching applications.
This MOSFET offers a maximum continuous drain current of 5.8 A, making it suitable for loads requiring moderate current capability. The maximum drain-source voltage rating of 650 V provides robustness in high voltage environments, ensuring reliable operation in various industrial and commercial electronics.
Encapsulated in a TO-252 surface mount package with 3 pins, this component supports compact PCB layouts and easy mounting. Its low maximum drain-source resistance (Rds) of 1.05 Ω facilitates minimized power losses and improved energy efficiency.
The device tolerates a wide operational temperature range from -55°C up to 150°C, ensuring stable performance in harsh and variable environmental conditions. A typical gate charge of 11 nC allows for fast switching speeds critical in high frequency applications.
Technical dimensions include a length of 6.6 mm, width of 6.1 mm, and height of 2.3 mm, enabling integration into diverse circuit designs. The forward voltage of 1.7 V supports effective conduction characteristics.
This MOSFET operates in enhancement mode for reliable switching. Surface mount TO-252 package facilitates PCB mounting. Robust 650 V maximum drain-source voltage. High continuous drain current of 5.8 A for demanding loads.
Low on-resistance minimizes energy loss. Wide operating temperature range from -55°C to 150°C. Typical gate charge supports fast switching. Compact size suits various electronic assemblies. Manufactured in Japan ensuring product quality.
This Toshiba DTMOSIV N-Channel MOSFET is ideal for power control and switching applications in industrial electronics, power supplies, automation systems, and embedded control units. It delivers reliable performance in both laboratory and commercial environments.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 5.8 A.
This model has a maximum drain-source voltage rating of 650 V, making it suitable for high voltage applications.
The maximum drain-source resistance (Rds) of this MOSFET is 1.05 Ω, which helps reduce conduction losses.
The dimensions of the TO-252 package are 6.6 mm in length, 6.1 mm in width, and 2.3 mm in height.
The typical gate charge for this MOSFET is 11 nC, allowing for fast switching speeds.
It operates safely within a temperature range of -55°C to 150°C.
This model uses a surface mount design, facilitating easy integration onto PCBs.
The forward voltage of this MOSFET is 1.7 V, which supports effective conduction characteristics.
This MOSFET features an N-channel type, suitable for enhancement mode applications.
The maximum power dissipation rating for this MOSFET is 60 W.
The maximum gate-source voltage for this model is -30 V to +30 V.
This MOSFET is manufactured in Japan, ensuring product quality.
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