Vishay 4.8 A 200 V N-Channel MOSFET, Enhancement Mode, 3-Pin TO-252 IRFR220TRPBF

Vishay IRFR220TRPBF is an N-Channel MOSFET rated for a maximum continuous drain current of 4.8 A and a drain-source voltage of 200 V. It operates in enhancement mode and is housed in a 3-pin TO-252 surface mount package ideal for modern PCB designs. The device features a maximum drain-source resistance (Rds) of 800 milliohms, contributing to high efficiency by reducing conduction losses.

This MOSFET boasts a maximum power dissipation of 42 W, enabling it to manage medium power loads efficiently. Its operating temperature range from -55°C to 150°C makes it suitable for industrial, automotive, and commercial applications requiring durability under extreme conditions. The device’s typical gate charge is 14 nC at gate to source voltage thresholds within ±20 V ensuring fast switching speeds with minimized gate drive power consumption.

The TO-252 package dimensions are compact, with a length of 6.73 mm, width of 6.22 mm, and a height of 2.38 mm, allowing for dense packing on circuit boards without compromising thermal performance. The forward voltage drop is 1.8 V, which helps in assessing efficiency in power circuits.

Applications include power management circuits, motor control, switch mode power supplies, and inverter circuits in industrial, automotive, telecommunications, and consumer electronics sectors.

The device is RoHS compliant and does not carry specific standards or automotive certifications but is suitable for a broad range of technical environments including embedded systems and energy conversion equipment.

Professionals and engineers seeking reliable power MOSFET components can browse and source this Vishay IRFR220TRPBF MOSFET from EnvMart’s extensive semiconductor category for electronic components and discrete devices.