Vishay P-Channel Power MOSFET 3.8 A, 20 V, Enhancement Mode, 3-Pin SOT-23 SI2367DS-T1-GE3

Vishay SI2367DS-T1-GE3 is a P-channel power MOSFET designed for efficient switching and amplification in electronic circuits. It operates in enhancement mode with a maximum continuous drain current of 3.8 A and a maximum drain-source voltage of 20 V, making it suitable for low voltage power management applications.

The device is housed in a three-pin SOT-23 surface mount package measuring 3.04 mm in length, 1.4 mm width, and 1.02 mm height, enabling compact PCB layouts and efficient thermal management. Its low maximum drain-source resistance of 0.066 ohms minimizes conduction losses, contributing to energy-efficient designs.

With a wide operating temperature range from -55°C to 150°C, the SI2367DS-T1-GE3 ensures stable performance in various industrial and commercial environments including power supplies, DC-DC converters, and motor control circuits. The typical gate charge of 9 nC supports rapid switching speeds, enhancing device responsiveness in dynamic applications.

The device tolerates gate-source voltages from -8 V to +8 V, providing robustness against control signal variations. It has a maximum power dissipation rating of 1.7 W, suitable for moderate power dissipation needs typical in embedded circuits.

This MOSFET complies with RoHS 2002/95/EC and IEC 61249-2-21 standards, ensuring environmental compliance and material safety. Manufactured in China, the SI2367DS-T1-GE3 offers a reliable component choice for electronic design engineers requiring a compact, high-performance P-channel MOSFET.

Key features include its surface mount package compatibility, low on-resistance, and extensive operating temperature range. These characteristics make it ideal for applications in power management modules, automotive electronics, industrial controls, and consumer device power regulation.

Enhancement mode P-channel MOSFET with 3.8 A max continuous drain current. Max drain-source voltage of 20 V supports low voltage power circuits. Low Rds(on) of 0.066 Ω reduces conduction loss. Compact 3-pin SOT-23 surface mount package for space-saving designs.

Wide operating temperature from -55°C to 150°C enhances durability. Typical gate charge 9 nC enables fast switching performance. Robust gate-source voltage tolerance of -8 V to +8 V. Power dissipation rating of 1.7 W suitable for embedded applications.

RoHS compliant and IEC certified for quality assurance. Browse the Electronics & Electricals > Discrete Semiconductors > Power MOSFET category at EnvMart for similar high-quality semiconductor devices.