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onsemi N-Channel Ignition IGBT, 21 A, 430 V, 150 W Power Dissipation, 3-Pin TO-252 Surface Mount ISL9V3040D3ST

Category IGBT Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Model ISL9V3040D3ST
Mount Type Surface
Series EcoSPARK
Energy Rating 300mJ
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -40°C
Standards/Approvals RoHS
Pin Count 3
Maximum Continuous Collector Current Ic 21A
Maximum Collector Emitter Voltage Vceo 430V
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V
Automotive Standard AEC-Q101
Channel Type N
Maximum Power Dissipation Pd 150W
Maximum Gate Emitter Voltage VGEO ±10 V

Key Features

  • This IGBT features a maximum power dissipation of 150 W to ensure reliable operation.
  • Equipped with a maximum gate-emitter voltage rating of ±10 V for flexible control.
  • Designed for high-speed switching with a switching speed up to 1 MHz.
  • Operating temperature range from -40°C to 175°C allows use in harsh industrial environments.
  • Complies with RoHS directive and automotive standard AEC-Q101 for quality assurance.
  • Compact 3-pin TO-252 package supports efficient surface mount applications.
  • Low collector-emitter saturation voltage of 2.2 V enhances efficiency and reduces power losses.
  • Energy rating of 300 mJ makes it suitable for ignition applications requiring robust energy handling.

Product Description

onsemi ISL9V3040D3ST is an N-channel ignition Insulated Gate Bipolar Transistor (IGBT) engineered for high efficiency and fast switching in power electronics applications. Featuring a continuous collector current rating of 21 A and a maximum collector-emitter voltage of 430 V, it delivers reliable performance in demanding conditions. The device utilizes a compact 3-pin TO-252 surface mount package suitable for space-constrained PCB designs.

This IGBT supports a maximum power dissipation of 150 W and operates efficiently with a low saturation voltage of 2.2 V, minimizing conduction losses. With a maximum gate-emitter voltage rating of ±10 V, it offers flexibility in controlling the switching device, enabling effective ignition system designs.

The robust operating temperature range from -40°C to 175°C certifies its suitability for industrial and automotive environments. Moreover, it is compliant with the RoHS directive and meets the automotive grade AEC-Q101 standard, ensuring quality and reliability for automotive ignition and power electronics systems.

This product is part of the EcoSPARK series and has an energy rating of 300 mJ, optimized for ignition applications. Its design efficiency and switching speed of up to 1 MHz make it ideal for high-performance discrete semiconductor power solutions.

This IGBT features a maximum power dissipation of 150 W to ensure reliable operation. Equipped with a maximum gate-emitter voltage rating of ±10 V for flexible control. Designed for high-speed switching with a switching speed up to 1 MHz.

Operating temperature range from -40°C to 175°C allows use in harsh industrial environments. Complies with RoHS directive and automotive standard AEC-Q101 for quality assurance. Compact 3-pin TO-252 package supports efficient surface mount applications.

Low collector-emitter saturation voltage of 2.2 V enhances efficiency and reduces power losses. Energy rating of 300 mJ makes it suitable for ignition applications requiring robust energy handling.

This N-channel IGBT suits industrial, automotive ignition, and power electronics applications requiring efficient fast switching performance and durability under diverse temperature conditions. Explore more high-quality discrete semiconductor products and IGBT modules in the Electronics & Electricals category at EnvMart.

onsemi N-Channel Ignition IGBT, 21 A, 430 V, 150 W Power Dissipation, 3-Pin TO-252 Surface Mount ISL9V3040D3ST
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Frequently Asked Questions

The maximum continuous collector current for this IGBT is 21 A.

This model has a maximum collector-emitter voltage rating of 430 V.

It supports a maximum power dissipation of 150 W.

The IGBT is designed for high-speed switching with a switching speed of up to 1 MHz.

The operating temperature range is from -40°C to 175°C, making it suitable for harsh environments.

It comes in a compact 3-pin TO-252 surface mount package.

The maximum gate-emitter voltage rating is ±10 V, allowing for flexible control.

It has an energy rating of 300 mJ, suitable for ignition applications.

Yes, it complies with the RoHS directive and meets the automotive standard AEC-Q101 for quality assurance.

The maximum collector-emitter saturation voltage is 2.2 V, which enhances efficiency and reduces power losses.

This IGBT is part of the EcoSPARK series.

It is suitable for industrial, automotive ignition, and power electronics applications requiring efficient fast switching performance.

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