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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Model | ISL9V3040D3ST |
| Mount Type | Surface |
| Series | EcoSPARK |
| Energy Rating | 300mJ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 21A |
| Maximum Collector Emitter Voltage Vceo | 430V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Power Dissipation Pd | 150W |
| Maximum Gate Emitter Voltage VGEO | ±10 V |
onsemi ISL9V3040D3ST is an N-channel ignition Insulated Gate Bipolar Transistor (IGBT) engineered for high efficiency and fast switching in power electronics applications. Featuring a continuous collector current rating of 21 A and a maximum collector-emitter voltage of 430 V, it delivers reliable performance in demanding conditions. The device utilizes a compact 3-pin TO-252 surface mount package suitable for space-constrained PCB designs.
This IGBT supports a maximum power dissipation of 150 W and operates efficiently with a low saturation voltage of 2.2 V, minimizing conduction losses. With a maximum gate-emitter voltage rating of ±10 V, it offers flexibility in controlling the switching device, enabling effective ignition system designs.
The robust operating temperature range from -40°C to 175°C certifies its suitability for industrial and automotive environments. Moreover, it is compliant with the RoHS directive and meets the automotive grade AEC-Q101 standard, ensuring quality and reliability for automotive ignition and power electronics systems.
This product is part of the EcoSPARK series and has an energy rating of 300 mJ, optimized for ignition applications. Its design efficiency and switching speed of up to 1 MHz make it ideal for high-performance discrete semiconductor power solutions.
This IGBT features a maximum power dissipation of 150 W to ensure reliable operation. Equipped with a maximum gate-emitter voltage rating of ±10 V for flexible control. Designed for high-speed switching with a switching speed up to 1 MHz.
Operating temperature range from -40°C to 175°C allows use in harsh industrial environments. Complies with RoHS directive and automotive standard AEC-Q101 for quality assurance. Compact 3-pin TO-252 package supports efficient surface mount applications.
Low collector-emitter saturation voltage of 2.2 V enhances efficiency and reduces power losses. Energy rating of 300 mJ makes it suitable for ignition applications requiring robust energy handling.
This N-channel IGBT suits industrial, automotive ignition, and power electronics applications requiring efficient fast switching performance and durability under diverse temperature conditions. Explore more high-quality discrete semiconductor products and IGBT modules in the Electronics & Electricals category at EnvMart.
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