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Vishay N-Channel MOSFET 5.6 A, 40 V Enhancement Mode, 3-Pin SOT-23 SI2318CDS-T1-GE3

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Vishay N-Channel MOSFET 5.6 A, 40 V Enhancement Mode, 3-Pin SOT-23 SI2318CDS-T1-GE3

Name: Vishay N-Channel MOSFET 5.6 A, 40 V Enhancement Mode, 3-Pin SOT-23 SI2318CDS-T1-GE3
Brand: Vishay
SKU: 395639
Price: 0.25 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Height	1.02mm
Length	3.04mm
Model	SI2318CDS-T1-GE3
Width	1.4mm
Mount Type	Surface
Series	Si2318CDS
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	5.6A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	51mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2.1W
Typical Gate Charge Qg @ Vgs	5.8nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V

Key Features

The device is packaged in a compact 3-pin SOT-23 to enable surface mounting.
Maximum continuous drain current is 5.6 amperes for reliable power handling.
Maximum drain-source voltage rating is 40 volts ensuring suitability for low-voltage switching applications.
Maximum power dissipation is 2.1 watts allowing operation under moderate thermal conditions.
The typical gate charge is low at 5.8 nC enabling efficient switching performance.
Drain-source resistance is low at 51 milliohms minimizing conduction losses.
Operating temperature ranges from -55°C to 150°C for wide environmental tolerance.
Forward voltage is specified at 1.2 volts for diode conduction paths within the MOSFET.

Product Description

Vishay SI2318CDS-T1-GE3 is a high-performance N-Channel MOSFET transistor designed for surface mount applications. The device delivers a maximum continuous drain current of 5.6 amperes and a drain-source voltage of 40 volts, making it suitable for low voltage switching and power management circuits. Packaged in a small 3-pin SOT-23 form factor, the MOSFET offers a compact footprint ideal for densely populated printed circuit boards.

This enhancement mode transistor features a low gate charge of 5.8 nC and low drain-source resistance of 51 milliohms, enabling energy-efficient switching with minimal power loss. The device supports a wide operating temperature range from -55°C to 150°C, covering industrial and automotive environment requirements.

Key performance parameters include a maximum power dissipation of 2.1 watts, forward diode voltage of 1.2 volts, and a gate-source voltage limit of -20 to +20 volts, ensuring robust operation under typical switching conditions.

The SI2318CDS-T1-GE3 transistor is widely used in electronic circuits for switching regulators, load switches, DC-DC converters, and other power control applications in industrial, automotive, and consumer electronics sectors.

The device is surface mount compatible with a 3-pin SOT-23 package. Maximum continuous drain current is 5.6 amperes, suitable for moderate load control. Drain-source voltage rating is 40 volts ideal for low-voltage power circuits.

Typical gate charge of 5.8 nC reduces switching losses and improves efficiency. Low on-resistance of 51 milliohms enhances conduction efficiency and thermal performance. Operating temperature range from -55°C to 150°C supports harsh environment use.

Maximum power dissipation of 2.1 watts supports cooling and thermal management. Forward voltage is 1.2 volts assuring reliable diode conduction during switching.

Choose the Vishay SI2318CDS-T1-GE3 MOSFET for robust and efficient power switching in a small form factor design. It is ideal for industrial, automotive, laboratory, and manufacturing electronic applications. Explore more semiconductor solutions in the Vishay MOSFET category at EnvMart.

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Frequently Asked Questions

The maximum continuous drain current of the Vishay SI2318CDS-T1-GE3 is 5.6 amperes.

This model has a maximum drain-source voltage rating of 40 volts, making it suitable for low-voltage switching applications.

The typical gate charge for the SI2318CDS-T1-GE3 is 5.8 nC, which helps in achieving efficient switching performance.

The drain-source resistance is low at 51 milliohms, minimizing conduction losses during operation.

The operating temperature range for this MOSFET is from -55°C to 150°C, allowing it to function in a wide variety of environments.

The maximum power dissipation for this model is 2.1 watts, supporting operation under moderate thermal conditions.

The forward voltage for diode conduction paths within the MOSFET is specified at 1.2 volts.

It is packaged in a compact 3-pin SOT-23 form factor, suitable for surface mounting.

The maximum gate-source voltage limit for this model is -20 to +20 volts, ensuring robust operation during switching.

This MOSFET is widely used in switching regulators, load switches, and DC-DC converters across industrial, automotive, and consumer electronics sectors.